EP 4036966 A1 20220803 - METAL SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING A METAL SUBSTRATE STRUCTURE FOR A SEMICONDUCTOR POWER MODULE AND SEMICONDUCTOR POWER MODULE
Title (en)
METAL SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING A METAL SUBSTRATE STRUCTURE FOR A SEMICONDUCTOR POWER MODULE AND SEMICONDUCTOR POWER MODULE
Title (de)
METALLSUBSTRATSTRUKTUR UND VERFAHREN ZUR HERSTELLUNG EINER METALLSUBSTRATSTRUKTUR FÜR EIN HALBLEITERLEISTUNGSMODUL SOWIE HALBLEITERLEISTUNGSMODUL
Title (fr)
STRUCTURE DE SUBSTRAT MÉTALLIQUE ET PROCÉDÉ DE FABRICATION D'UNE STRUCTURE DE SUBSTRAT MÉTALLIQUE POUR UN MODULE DE PUISSANCE SEMI-CONDUCTEUR ET MODULE DE PUISSANCE SEMI-CONDUCTEUR
Publication
Application
Priority
EP 21154772 A 20210202
Abstract (en)
A metal substrate structure (10) for a semiconductor power module comprises a metal top layer (11) having at least one penetrating recess (14) which is formed by means of stamping and a metal bottom layer (13). The metal substrate structure (10) further comprises a dielectric layer (12) which is coupled with both the metal top layer (11) and the metal bottom layer (13), wherein the dielectric layer (12) is formed by means of molding between the metal top layer (11) and the metal bottom layer (13).
IPC 8 full level
H01L 23/373 (2006.01); H01L 23/498 (2006.01)
CPC (source: EP)
H01L 23/3735 (2013.01); H01L 23/49861 (2013.01)
Citation (search report)
- [X] US 6570099 B1 20030527 - HIRANO KOICHI [JP], et al
- [XI] EP 1160861 A2 20011205 - MATSUSHITA ELECTRIC IND CO LTD [JP]
- [X] EP 1909324 A1 20080409 - MATSUSHITA ELECTRIC IND CO LTD [JP]
- [X] US 6060150 A 20000509 - NAKATANI SEIICHI [JP], et al
- [XI] JP 2008210920 A 20080911 - MATSUSHITA ELECTRIC IND CO LTD
- [XI] JP 2014090103 A 20140515 - DENSO CORP, et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 4036966 A1 20220803; CN 116964732 A 20231027; JP 2024504838 A 20240201; WO 2022167231 A1 20220811
DOCDB simple family (application)
EP 21154772 A 20210202; CN 202280012485 A 20220121; EP 2022051325 W 20220121; JP 2023546491 A 20220121