EP 4037440 A4 20221116 - PLASMA GENERATION DEVICE AND PLASMA TREATMENT METHOD
Title (en)
PLASMA GENERATION DEVICE AND PLASMA TREATMENT METHOD
Title (de)
PLASMAERZEUGUNGSVORRICHTUNG UND PLASMABESTRAHLUNGSVERFAHREN
Title (fr)
DISPOSITIF DE GÉNÉRATION DE PLASMA ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
Publication
Application
Priority
JP 2019038099 W 20190927
Abstract (en)
[origin: EP4037440A1] A plasma generation device includes a device main body formed with a reaction chamber for plasmatizing a processing gas, a ceramic nozzle formed with a first ejection port for ejecting a plasma gas that is plasmatized in the reaction chamber, and a metal nozzle cover in which a second ejection port for ejecting a gas so as to cover the plasma gas is formed to cover the first ejection port.
IPC 8 full level
CPC (source: EP)
H05H 1/466 (2021.05); H05H 1/341 (2013.01)
Citation (search report)
- [X] JP 2010212182 A 20100924 - JAPAN RADIO CO LTD
- [X] JP H05174994 A 19930713 - ORIGIN ELECTRIC
- [X] EP 1893004 A1 20080227 - THERMAL DYNAMICS CORP [US]
- [A] WO 2019180839 A1 20190926 - FUJI CORP [JP]
- [A] JP S56126981 U 19810926
- [A] JP S57165370 U 19821018
- [XI] JP H08294779 A 19961112 - KOIKE SANSO KOGYO KK
- [A] US 5220150 A 19930615 - PFENDER EMIL [US], et al
- [A] US 3830428 A 19740820 - DYOS G
- See also references of WO 2021059469A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
EP 4037440 A1 20220803; EP 4037440 A4 20221116; CN 114430935 A 20220503; JP 7461961 B2 20240404; JP WO2021059469 A1 20210401; WO 2021059469 A1 20210401
DOCDB simple family (application)
EP 19947409 A 20190927; CN 201980100638 A 20190927; JP 2019038099 W 20190927; JP 2021548108 A 20190927