EP 4059055 A1 20220921 - MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Title (en)
MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Title (de)
MIKROSTRUKTURVERBESSERTE LICHTEMPFINDLICHE ADSORPTIONSVORRICHTUNGEN
Title (fr)
DISPOSITIFS PHOTOSENSIBLES À ABSORPTION AMÉLIORÉE PAR DES MICROSTRUCTURES
Publication
Application
Priority
- US 201962905065 P 20190924
- US 201962914028 P 20191011
- US 201962925183 P 20191023
- US 201962950888 P 20191219
- US 202062957779 P 20200106
- US 202062964094 P 20200121
- US 202062968093 P 20200130
- US 202062969624 P 20200203
- US 202062975726 P 20200212
- US 202062978736 P 20200219
- US 202062981979 P 20200226
- US 202062985171 P 20200304
- US 202062993414 P 20200323
- US 202062994758 P 20200325
- US 202063005152 P 20200403
- US 202063009928 P 20200414
- US 202063011217 P 20200416
- US 202063016160 P 20200427
- US 202063019208 P 20200501
- US 202063026591 P 20200518
- US 202063033153 P 20200601
- US 202063034964 P 20200604
- US 202063034961 P 20200604
- US 202063038079 P 20200611
- US 201962937813 P 20191120
- US 201962943146 P 20191203
- US 202063039945 P 20200616
- US 202063039941 P 20200616
- US 202063041997 P 20200621
- US 202063043709 P 20200624
- US 202063048641 P 20200706
- US 202063050044 P 20200709
- US 202063051896 P 20200715
- US 202063054192 P 20200720
- US 2020051733 W 20200921
Abstract (en)
[origin: WO2021061543A1] Microstructure enhanced photodector arrangements uses a CMOS image sensor (CIS) wafer of crystalline Si and a CMOS Logic Processor (CLP) wafer stacked on each other for electrical interaction. The wafers can be fabricated separately and stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays are enhanced with microstructure holes. Avalanche photodiodes, single photon avalanche photodiodes and phototransistors can be laterally and/or vertically doped. Photodetectors / photosensors can have slanted sidewalls for improved optical confinement and reduced crosstalk.
IPC 8 full level
H01L 27/146 (2006.01); H01L 31/101 (2006.01); H01L 31/102 (2006.01)
CPC (source: EP)
H01L 27/14603 (2013.01); H01L 27/1461 (2013.01); H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 31/03529 (2013.01); H01L 31/1055 (2013.01); H01L 31/107 (2013.01); G01S 7/4863 (2013.01); G01S 7/4914 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2021061543 A1 20210401; EP 4059055 A1 20220921; EP 4059055 A4 20231227
DOCDB simple family (application)
US 2020051733 W 20200921; EP 20868204 A 20200921