EP 4059055 A4 20231227 - MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Title (en)
MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Title (de)
MIKROSTRUKTURVERBESSERTE LICHTEMPFINDLICHE ADSORPTIONSVORRICHTUNGEN
Title (fr)
DISPOSITIFS PHOTOSENSIBLES À ABSORPTION AMÉLIORÉE PAR DES MICROSTRUCTURES
Publication
Application
Priority
- US 201962905065 P 20190924
- US 201962914028 P 20191011
- US 201962925183 P 20191023
- US 201962950888 P 20191219
- US 202062957779 P 20200106
- US 202062964094 P 20200121
- US 202062968093 P 20200130
- US 202062969624 P 20200203
- US 202062975726 P 20200212
- US 202062978736 P 20200219
- US 202062981979 P 20200226
- US 202062985171 P 20200304
- US 202062993414 P 20200323
- US 202062994758 P 20200325
- US 202063005152 P 20200403
- US 202063009928 P 20200414
- US 202063011217 P 20200416
- US 202063016160 P 20200427
- US 202063019208 P 20200501
- US 202063026591 P 20200518
- US 202063033153 P 20200601
- US 202063034964 P 20200604
- US 202063034961 P 20200604
- US 202063038079 P 20200611
- US 201962937813 P 20191120
- US 201962943146 P 20191203
- US 202063039945 P 20200616
- US 202063039941 P 20200616
- US 202063041997 P 20200621
- US 202063043709 P 20200624
- US 202063048641 P 20200706
- US 202063050044 P 20200709
- US 202063051896 P 20200715
- US 202063054192 P 20200720
- US 2020051733 W 20200921
Abstract (en)
[origin: WO2021061543A1] Microstructure enhanced photodector arrangements uses a CMOS image sensor (CIS) wafer of crystalline Si and a CMOS Logic Processor (CLP) wafer stacked on each other for electrical interaction. The wafers can be fabricated separately and stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays are enhanced with microstructure holes. Avalanche photodiodes, single photon avalanche photodiodes and phototransistors can be laterally and/or vertically doped. Photodetectors / photosensors can have slanted sidewalls for improved optical confinement and reduced crosstalk.
IPC 8 full level
H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/102 (2006.01); H01L 31/105 (2006.01); H01L 31/107 (2006.01)
CPC (source: EP)
H01L 27/14603 (2013.01); H01L 27/1461 (2013.01); H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 31/03529 (2013.01); H01L 31/1055 (2013.01); H01L 31/107 (2013.01); G01S 7/4863 (2013.01); G01S 7/4914 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01)
Citation (search report)
- [XI] KR 20180077393 A 20180709 - SAMSUNG ELECTRONICS CO LTD [KR]
- [X] CN 109659377 A 20190419 - SHENZHEN ADAPS PHOTONICS TECH CO LTD
- [E] EP 3772104 A1 20210203 - W&WSENS DEVICES INC [US]
- [A] WO 2017112747 A1 20170629 - W&WSENS DEVICES INC [US]
- See references of WO 2021061543A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2021061543 A1 20210401; EP 4059055 A1 20220921; EP 4059055 A4 20231227
DOCDB simple family (application)
US 2020051733 W 20200921; EP 20868204 A 20200921