EP 4066274 A1 20221005 - METHOD FOR PRODUCING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE OF POLYCRYSTALLINE SIC
Title (en)
METHOD FOR PRODUCING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE OF POLYCRYSTALLINE SIC
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER VERBUNDSTRUKTUR MIT EINER DÜNNEN SCHICHT AUS MONOKRISTALLINEM SIC AUF EINEM TRÄGERSUBSTRAT AUS POLYKRISTALLINEM SIC
Title (fr)
PROCEDE DE FABRICATION D'UNE STRUCTURE COMPOSITE COMPRENANT UNE COUCHE MINCE EN SIC MONOCRISTALLIN SUR UN SUBSTRAT SUPPORT EN SIC CRISTALLIN
Publication
Application
Priority
- FR 1913553 A 20191129
- FR 2020051928 W 20201026
Abstract (en)
[origin: WO2021105575A1] The invention relates to a method for producing a composite structure (1) comprising a thin layer (10) of monocrystalline silicon carbide placed on a carrier substrate (20) of silicon carbide. The method comprises: a) a step of provision of an initial substrate (11) of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer (110) of monocrystalline silicon carbide on the initial substrate (11), so as to form a donor substrate (111), c) a step of ion implantation of light species into the donor layer (110), so as to form a buried brittle plane (12) delimiting the thin layer (10), d) a step of formation of a support substrate (20) of silicon carbide on the free surface of the donor layer (110), comprising a deposition at a temperature of between 400°C and 1100°C, e) a step of separation along the buried brittle plane (12), so as to form both the composite structure (1) and the remainder of the donor substrate (111'), f) a step of chemical-mechanical treatment(s) of the composite structure (1).
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP KR US)
C23C 16/325 (2013.01 - US); C30B 25/20 (2013.01 - US); C30B 29/36 (2013.01 - US); C30B 31/22 (2013.01 - US); C30B 33/10 (2013.01 - US); H01L 21/02002 (2013.01 - EP KR); H01L 21/02079 (2013.01 - US); H01L 21/02378 (2013.01 - EP KR US); H01L 21/02433 (2013.01 - EP KR); H01L 21/02447 (2013.01 - EP KR US); H01L 21/02529 (2013.01 - EP KR US); H01L 21/0262 (2013.01 - EP KR US); H01L 21/02628 (2013.01 - US); H01L 21/02658 (2013.01 - EP KR); H01L 21/7813 (2013.01 - US); H01L 21/76254 (2013.01 - EP KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2021105575 A1 20210603; CN 114746980 A 20220712; EP 4066274 A1 20221005; FR 3103961 A1 20210604; FR 3103961 B1 20211029; FR 3103962 A1 20210604; FR 3103962 B1 20211105; JP 2023502572 A 20230125; KR 20220107173 A 20220802; TW 202137284 A 20211001; US 2023260841 A1 20230817
DOCDB simple family (application)
FR 2020051928 W 20201026; CN 202080081990 A 20201026; EP 20807825 A 20201026; FR 1913553 A 20191129; FR 2003025 A 20200327; JP 2022523652 A 20201026; KR 20227016662 A 20201026; TW 109135221 A 20201012; US 202017756615 A 20201026