EP 4075525 A3 20221026 - SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
Title (en)
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
Title (de)
LICHTEMITTIERENDES HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG DAVON
Title (fr)
DISPOSITIF ÉLECTROLUMINESCENT SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
JP 2021070004 A 20210416
Abstract (en)
A semiconductor light emitting device includes a plane substrate having a flat substrate surface, a semiconductor light emitting element mounted on the substrate surface, and a lens formed of a resin which embeds the semiconductor light emitting element and condenses light emitted from the semiconductor light emitting element. A circular ring-shaped metal ring body surrounding the semiconductor light emitting element, and a plurality of regulation holes arranged inside the metal ring body at positions rotationally symmetric with respect to the center of the metal ring body are provided on the substrate surface. A bottom of the lens is defined by the metal ring body and the regulation holes. A body part of the lens has a plurality of valley portions extending toward the top of the lens from the positions of the regulation holes. The top of the lens has a surface as a spheroid surface with an axis vertical to the substrate surface and passing through the center of the metal ring body as a major axis.
IPC 8 full level
H01L 33/54 (2010.01)
CPC (source: CN EP US)
H01L 33/005 (2013.01 - CN US); H01L 33/24 (2013.01 - US); H01L 33/483 (2013.01 - CN); H01L 33/54 (2013.01 - EP); H01L 33/58 (2013.01 - CN US); H01L 33/486 (2013.01 - EP); H01L 2933/0033 (2013.01 - CN); H01L 2933/0058 (2013.01 - CN US)
Citation (search report)
- [A] US 2015054013 A1 20150226 - PARK JUN SEOK [KR], et al
- [A] JP 2013149637 A 20130801 - ASAHI GLASS CO LTD
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
EP 4075525 A2 20221019; EP 4075525 A3 20221026; EP 4075525 B1 20231129; CN 115224179 A 20221021; JP 2022164486 A 20221027; US 2022336717 A1 20221020
DOCDB simple family (application)
EP 22167323 A 20220408; CN 202210388455 A 20220414; JP 2021070004 A 20210416; US 202217718653 A 20220412