EP 4078681 A1 20221026 - HEMT TRANSISTOR
Title (en)
HEMT TRANSISTOR
Title (de)
HEMT-TRANSISTOR
Title (fr)
TRANSISTOR HEMT
Publication
Application
Priority
- FR 1915026 A 20191220
- EP 2020087322 W 20201218
Abstract (en)
[origin: WO2021123382A1] The invention relates to a high-mobility field-effect transistor (100) comprising: - a stack (10) along a Z axis deposited on a substrate (11) and comprising a buffer layer (12), a barrier layer (13), a heterojunction (15) between the buffer layer (12) and the layer (13) and a two-dimensional electron gas (9) located in an XY plane perpendicular to the Z axis and near the heterojunction (15), - a source (S), a drain (D), and a gate (G) deposited on an upper face (14) of the barrier layer (13) between the source and the drain, - a first dielectric layer (PL1) having a relative permittivity εr and thickness e such that: 0.5 nm ≤ e/εr ≤ 2 nm, - a metal pad (PM) arranged between the gate (G) and the drain (D) and deposited on the first dielectric layer (PL1), the metal pad being electrically connected to the gate.
IPC 8 full level
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01)
CPC (source: EP US)
H01L 29/2003 (2013.01 - US); H01L 29/402 (2013.01 - EP); H01L 29/7786 (2013.01 - EP US); H01L 29/2003 (2013.01 - EP); H01L 29/41758 (2013.01 - EP)
Citation (search report)
See references of WO 2021123382A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
FR 3105580 A1 20210625; EP 4078681 A1 20221026; US 2022406925 A1 20221222; WO 2021123382 A1 20210624
DOCDB simple family (application)
FR 1915026 A 20191220; EP 2020087322 W 20201218; EP 20824594 A 20201218; US 202017787566 A 20201218