EP 4080582 A1 20221026 - GALLIUM NITRIDE DEVICE, SWITCHING POWER TRANSISTOR, DRIVE CIRCUIT, AND GALLIUM NITRIDE DEVICE PRODUCTION METHOD
Title (en)
GALLIUM NITRIDE DEVICE, SWITCHING POWER TRANSISTOR, DRIVE CIRCUIT, AND GALLIUM NITRIDE DEVICE PRODUCTION METHOD
Title (de)
GALLIUMNITRIDVORRICHTUNG, SCHALTLEISTUNGSTRANSISTOR, TREIBERSCHALTUNG UND VERFAHREN ZUR HERSTELLUNG EINER GALLIUMNITRIDVORRICHTUNG
Title (fr)
DISPOSITIF DE NITRURE DE GALLIUM, TRANSISTOR DE PUISSANCE DE COMMUTATION, CIRCUIT DE COMMANDE ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF DE NITRURE DE GALLIUM
Publication
Application
Priority
CN 202110436275 A 20210422
Abstract (en)
Embodiments of this application provide a gallium nitride device, a switching power transistor, a drive circuit, and a gallium nitride device production method. A drain of the gallium nitride device includes a P-GaN layer (500) and a drain metal (M). The P-GaN layer is formed on an AlGaN layer (400), and is of a strip structure in a gate width direction (A) of the device. The drain metal includes a plurality of first structural intervals (610) and a plurality of second structural intervals (620). The plurality of first structural intervals and the plurality of second structural intervals are alternately distributed in the gate width direction. In the first structural intervals, the drain metal is in contact with the P-GaN layer but not with the AlGaN layer; and in the second structural intervals, the drain metal is in contact with the P-GaN layer and forms ohmic contact with the AlGaN layer. In this way, the drain metal implements local injection of holes for the device in the first structural intervals, and forms ohmic contact (Ohmic contact) in the second structural intervals, implementing current conduction from a drain to a source of the device. Therefore, while efficiency of hole injection at P-GaN is ensured, the device does not have an excessively large intrinsic on-resistance, thereby increasing a switching speed of the device, reducing a driving loss of the device, and improving reliability of the device.
IPC 8 full level
H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/20 (2006.01)
CPC (source: CN EP US)
H01L 29/0603 (2013.01 - CN); H01L 29/0619 (2013.01 - EP); H01L 29/0653 (2013.01 - EP); H01L 29/0684 (2013.01 - CN); H01L 29/401 (2013.01 - US); H01L 29/41725 (2013.01 - EP); H01L 29/41758 (2013.01 - EP); H01L 29/41775 (2013.01 - US); H01L 29/452 (2013.01 - US); H01L 29/66431 (2013.01 - CN); H01L 29/66462 (2013.01 - US); H01L 29/7786 (2013.01 - CN EP US); H03K 17/04106 (2013.01 - US); H01L 29/2003 (2013.01 - EP)
Citation (search report)
- [XI] CN 112531020 A 20210319 - XIAMEN SANAN INTEGRATED CIRCUIT CO LTD
- [XI] US 2011215379 A1 20110908 - IKOSHI AYANORI [JP], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
EP 4080582 A1 20221026; EP 4080582 B1 20240424; CN 113224156 A 20210806; CN 113224156 B 20230210; JP 2022167848 A 20221104; JP 7368535 B2 20231024; US 2022344485 A1 20221027
DOCDB simple family (application)
EP 22169177 A 20220421; CN 202110436275 A 20210422; JP 2022070166 A 20220421; US 202217727221 A 20220422