EP 4081671 A4 20230927 - DEVICE FOR DEPOSITION OF DIELECTRIC OPTICAL THIN FILMS BY THE HELP OF SPUTTERING PLASMA SOURCES AND SOURCES OF ENERGY IONS
Title (en)
DEVICE FOR DEPOSITION OF DIELECTRIC OPTICAL THIN FILMS BY THE HELP OF SPUTTERING PLASMA SOURCES AND SOURCES OF ENERGY IONS
Title (de)
VORRICHTUNG ZUR ABSCHEIDUNG DIELEKTRISCHER OPTISCHER DÜNNSCHICHTEN MITHILFE VON SPUTTERING-PLASMAQUELLEN UND QUELLEN VON ENERGIE-IONEN
Title (fr)
DISPOSITIF POUR LE DÉPÔT DE FILMS MINCES OPTIQUES DIÉLECTRIQUES À L'AIDE DE SOURCES DE PLASMA DE PULVÉRISATION CATHODIQUE ET DE SOURCES D'IONS À ÉNERGIE
Publication
Application
Priority
CZ 2020000053 W 20201203
Abstract (en)
[origin: WO2022117130A1] Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions which is formed with a vacuum chamber (1) whose inner volume (101) is through a regulation valve (2) connected with a vacuum pump (3), where the vacuum chamber (1) is in its upper part equipped with an entrance flange (102) for possibility of supply of working gas which is Into the inner volume (101) blown through a mas flowmeter (4) whereas in the Inner volume (101) are opposed a controlled ion source (5) and a pivoted and heated substrate holder (6) and between them are placed a system of sputtering plasma sources (?) which together with the ion source (S) generate flow of neutral and ionized particles. The essence of the invention is that above the pivoted substrate holder (8) is placed a system of at least two stationary high frequency probes (8) for possibility of measurement in real time ion flow and ion energy distribution function of landing ions at given place of placement of the samples of the substrate (9) on the substrate holder (8) whereas not only the ion source (5) is connected with the first power supply unit (10) and the sputtering plasma sources (?) with the second power supply unit (11) when both power supply units (10) and (11) are placed outside of the vacuum chamber (1) but also the substrate holder (6) is connected with a control unit (12) which is also placed outside of the vacuum chamber (1) and also there is, as an integrated part of the device, a processing and control unit (13) which is also placed outside of the vacuum chamber (1) and which is in parallel connected with the first power supply unit (10), the second power supply unit (11) and Individually with each stationary high frequency probe (8) when the connection with particular stationary high frequency probes (8) is realized through digitizers (14) which are placed outside of the vacuum chamber (1).
IPC 8 full level
H01J 37/32 (2006.01); C23C 14/54 (2006.01)
CPC (source: EP)
C23C 14/3442 (2013.01); C23C 14/544 (2013.01); H01J 37/32917 (2013.01); H01J 37/32935 (2013.01); H01J 37/34 (2013.01); H01J 37/3417 (2013.01)
Citation (search report)
- [A] WO 2015134108 A1 20150911 - WHITE NICHOLAS R [US]
- [AD] CZ 29907 U1 20161025 - UNIVERZITA PALACKÉHO [CZ]
- [AD] CZ 304493 B6 20140528 - FYZIKÁLNÍ STAV AV ČR [CZ], et al
- [A] CZ 33034 U1 20190730 - UNIV PALACKEHO [CZ]
- [A] HAJIHOSEINI HAMIDREZA ET AL: "The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge", PLASMA, vol. 2, no. 2, 13 May 2019 (2019-05-13), pages 201 - 221, XP093075106, DOI: 10.3390/plasma2020015
- [A] STRANAK VITEZSLAV ET AL: "Investigation of ionized metal flux in enhanced high power impulse magnetron sputtering discharges", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 115, no. 15, 21 April 2014 (2014-04-21), XP012184667, ISSN: 0021-8979, [retrieved on 19010101], DOI: 10.1063/1.4871635
- See references of WO 2022117130A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022117130 A1 20220609; EP 4081671 A1 20221102; EP 4081671 A4 20230927
DOCDB simple family (application)
CZ 2020000053 W 20201203; EP 20964203 A 20201203