EP 4097520 A1 20221207 - SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME
Title (en)
SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME
Title (de)
HALBLEITERVORRICHTUNG UND HALBLEITEREINRICHTUNG SOWIE VERFAHREN ZUR HERSTELLUNG SOLCHER
Title (fr)
APPAREIL À SEMI-CONDUCTEUR ET DISPOSITIF À SEMI-CONDUCTEUR, ET PROCÉDÉ DE PRODUCTION
Publication
Application
Priority
- DE 102020102534 A 20200131
- EP 2020087445 W 20201221
Abstract (en)
[origin: CA3169253A1] The present application relates to a semiconductor apparatus, comprising a wafer (1) having a preferably one-piece semiconductor substrate, in particular a silicon substrate (2), and at least one integrated electronic component (3) which extends in and/or on the semiconductor substrate (2), wherein the wafer (1) comprises a front-end-of-line (5) that has the integrated electronic component (3), or at least one of the integrated electronic components, and comprises a back-end-of-line (6) located thereabove, and a photonic platform (8) which is produced on the top face (9) of the wafer (1) facing away from the front-end-of-line (5), which platform comprises at least one waveguide (12) and at least one electro-optic device (15), in particular at least one photodetector and/or at least one electro-optic modulator, wherein the electro-optic devices (15), or at least one of the electro-optic devices, of the photonic platform (8) is connected to the integrated electronic components (3), or at least one of integrated electronic components, of the wafer (1).
IPC 8 full level
G02B 6/132 (2006.01); G02F 1/035 (2006.01); H01L 31/09 (2006.01)
CPC (source: EP KR US)
G02B 6/12004 (2013.01 - KR US); G02B 6/1226 (2013.01 - KR); G02B 6/1228 (2013.01 - US); G02B 6/132 (2013.01 - KR US); G02F 1/035 (2013.01 - KR US); H01L 27/144 (2013.01 - US); H01L 27/1443 (2013.01 - US); H01L 31/0203 (2013.01 - EP KR); H01L 31/02325 (2013.01 - EP KR); H01L 31/09 (2013.01 - KR); G02B 6/12004 (2013.01 - EP); G02B 6/1226 (2013.01 - EP); G02B 6/132 (2013.01 - EP); G02B 2006/12061 (2013.01 - EP KR); G02B 2006/12097 (2013.01 - EP KR); G02B 2006/12142 (2013.01 - EP KR); G02F 1/035 (2013.01 - EP); G02F 2201/063 (2013.01 - US); G02F 2201/066 (2013.01 - US); G02F 2202/101 (2013.01 - US); G02F 2202/104 (2013.01 - US); G02F 2202/36 (2013.01 - US); G02F 2203/10 (2013.01 - US)
Citation (search report)
See references of WO 2021151594A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
DE 102020102534 A1 20210805; CA 3169253 A1 20210805; CN 115039003 A 20220909; EP 4097520 A1 20221207; JP 2023512099 A 20230323; KR 20220126734 A 20220916; US 2023123602 A1 20230420; WO 2021151594 A1 20210805
DOCDB simple family (application)
DE 102020102534 A 20200131; CA 3169253 A 20201221; CN 202080095177 A 20201221; EP 2020087445 W 20201221; EP 20829172 A 20201221; JP 2022547027 A 20201221; KR 20227025950 A 20201221; US 202017796369 A 20201221