EP 4104202 A1 20221221 - LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
Title (en)
LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
Title (de)
GROSSFLÄCHIGE III-NITRID-KRISTALLE UND SUBSTRATE, VERFAHREN ZU DEREN HERSTELLUNG UND VERWENDUNGSVERFAHREN
Title (fr)
CRISTAUX ET SUBSTRATS DE NITRURE DU GROUPE III DE GRANDE SURFACE, LEURS PROCÉDÉS DE FABRICATION ET LEURS PROCÉDÉS D'UTILISATION
Publication
Application
Priority
- US 202062975078 P 20200211
- US 202063006700 P 20200407
- US 202016882219 A 20200522
- US 2021017514 W 20210210
Abstract (en)
[origin: WO2021163230A1] Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-ill metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
IPC 8 full level
H01L 21/02 (2006.01); C30B 29/38 (2006.01); C30B 29/40 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01)
CPC (source: EP)
C30B 7/105 (2013.01); C30B 29/406 (2013.01); H01L 21/02389 (2013.01); H01L 21/02428 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02516 (2013.01); H01L 21/0254 (2013.01); H01L 21/0259 (2013.01); H01L 21/02609 (2013.01); H01L 21/0262 (2013.01); H01L 21/02647 (2013.01); H01L 21/02658 (2013.01); H01L 29/0646 (2013.01); H01L 29/2003 (2013.01); H01L 29/7788 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 33/025 (2013.01); H01L 33/32 (2013.01)
Citation (search report)
See references of WO 2021163230A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2021163230 A1 20210819; CN 115104175 A 20220923; EP 4104202 A1 20221221; JP 2023513574 A 20230331
DOCDB simple family (application)
US 2021017514 W 20210210; CN 202180013902 A 20210210; EP 21710686 A 20210210; JP 2022548644 A 20210210