Title (en)

MATERIAL FOR FORMATION OF THIN FILM FOR USE IN ATOMIC LAYER DEPOSITION AND METHOD FOR PRODUCING THIN FILM

Title (de)

MATERIAL ZUR BILDUNG EINES DÜNNFILMS ZUR VERWENDUNG BEI DER ATOMLAGENABSCHEIDUNG UND VERFAHREN ZUR HERSTELLUNG EINES DÜNNFILMS

Title (fr)

MATÉRIAU POUR LA FORMATION DE FILM MINCE DESTINÉ À ÊTRE UTILISÉ DANS LE DÉPÔT DE COUCHE ATOMIQUE ET PROCÉDÉ DE PRODUCTION D'UN FILM MINCE

Publication

EP 4130335 A4 20240703 (EN)

Application

EP 21781717 A 20210318

Priority

• JP 2020065624 A 20200401
• JP 2021011088 W 20210318

Abstract (en)

[origin: EP4130335A1] Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following formula (1):where R¹ and R² each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, L represents a group represented by the following formula (L-1) or (L-2), and M represents an indium atom or a gallium atom;where R¹¹ and R¹² each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1);where R²¹ to R²³ each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1), provided that R²¹ and R²² represent different groups.

IPC 8 full level

C07F 5/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/316 (2006.01)

CPC (source: EP IL KR US)

C07F 5/00 (2013.01 - EP US); C07F 5/003 (2013.01 - EP); C07F 13/005 (2013.01 - KR); C09D 1/00 (2013.01 - US); C23C 16/40 (2013.01 - EP IL KR US); C23C 16/407 (2013.01 - EP KR US); C23C 16/455 (2013.01 - IL); C23C 16/45525 (2013.01 - US); C23C 16/45553 (2013.01 - EP KR); H01L 21/02565 (2013.01 - EP); H01L 21/02612 (2013.01 - EP); H01L 21/02614 (2013.01 - EP); H01L 21/31 (2013.01 - IL); H01L 21/0262 (2013.01 - EP); H01L 21/02628 (2013.01 - EP)

Citation (search report)

• [XDI] KR 101221861 B1 20130114 - SOULBRAIN CO LTD [KR]
• [XD] WO 0037710 A1 20000629 - ADVANCED TECH MATERIALS [US]
• [X] O. T. BEACHLEY: "Diorganogallium [beta]-Diketonates and Their Lewis Acid-Base Adducts. Crystal and Molecular Structures of Mes 2 Ga(hfac) and Me 2 Ga(hfac).NC 5 H 5", ORGANOMETALLICS, March 1998 (1998-03-01) - 19 April 2024 (2024-04-19), pages 1101 - 1108, XP093153752, Retrieved from the Internet <URL:https://pubs.acs.org/doi/pdf/10.1021/om970988e> [retrieved on 20240419], DOI: 10.1021/om970988e
• [X] PETER J. PALLISTER: "Quantitative Surface Coverage Calculations via Solid-State NMR for Thin Film Depositions: A Case Study for Silica and a Gallium Amidinate", THE JOURNAL OF PHYSICAL CHEMISTRY C, vol. 118, no. 3, 8 January 2014 (2014-01-08), US, pages 1618 - 1627, XP093154013, ISSN: 1932-7447, DOI: 10.1021/jp4102674
• [X] DAVID W SHEEL ET AL: "Deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition", THIN SOLID FILMS, vol. 520, no. 4, 1 December 2011 (2011-12-01), pages 1242 - 1245, XP028334915, ISSN: 0040-6090, [retrieved on 20110505], DOI: 10.1016/J.TSF.2011.04.206
• See also references of WO 2021200218A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 4130335 A1 20230208; EP 4130335 A4 20240703; CN 115362282 A 20221118; CN 115362282 B 20240329; CN 118223007 A 20240621; IL 296896 A 20221201; JP WO2021200218 A1 20211007; KR 20220161371 A 20221206; TW 202208382 A 20220301; US 2023151220 A1 20230518; WO 2021200218 A1 20211007

DOCDB simple family (application)

EP 21781717 A 20210318; CN 202180025691 A 20210318; CN 202410330494 A 20210318; IL 29689622 A 20220929; JP 2021011088 W 20210318; JP 2022511886 A 20210318; KR 20227036835 A 20210318; TW 110110778 A 20210325; US 202117915270 A 20210318