EP 4133598 A4 20240522 - MEMRISTOR AIDED LOGIC (MAGIC) USING VALENCE CHANGE MEMORY (VCM)
Title (en)
MEMRISTOR AIDED LOGIC (MAGIC) USING VALENCE CHANGE MEMORY (VCM)
Title (de)
MEMRISTOR-GESTÜTZTE LOGIK (MAGIC) MIT VALENZÄNDERUNGSSPEICHER (VCM)
Title (fr)
LOGIQUE ASSISTÉE PAR DES MEMRISTANCES (MAGIC) FAISANT APPEL À UNE MÉMOIRE À CHANGEMENT DE VALENCE (VCM)
Publication
Application
Priority
- US 202063006131 P 20200407
- IL 2021050399 W 20210407
Abstract (en)
[origin: WO2021205452A1] A method of using memristor aided logic (MAGIC), comprises connecting together two input and one output memristor between a bit line and a word line, each memristor having a high resistance state and a low resistance state, setting the output memristor to the low resistance state as an initiation state and then applying logic inputs to the input memristors. The output then depends on whether the logic inputs have set the output memristor to the high resistance state.
IPC 8 full level
H03K 19/00 (2006.01); H03K 19/02 (2006.01); H03K 19/177 (2020.01); H03K 19/1776 (2020.01); G11C 13/00 (2006.01); H03K 19/0185 (2006.01)
CPC (source: EP KR US)
G11C 13/0026 (2013.01 - EP KR); G11C 13/0028 (2013.01 - EP KR); G11C 13/003 (2013.01 - EP); G11C 13/004 (2013.01 - EP); G11C 13/0069 (2013.01 - EP); H03K 19/17724 (2013.01 - KR); H03K 19/1776 (2013.01 - EP US); H03K 19/21 (2013.01 - US); G11C 13/0007 (2013.01 - EP); H03K 19/018585 (2013.01 - EP); H10N 70/026 (2023.02 - US); H10N 70/24 (2023.02 - US); H10N 70/841 (2023.02 - US); H10N 70/8833 (2023.02 - US)
Citation (search report)
- [XI] US 2015256178 A1 20150910 - KVATINSKY SHAHAR [IL], et al
- [I] US 2014063925 A1 20140306 - FRIEDMAN DANIEL J [US], et al
- [I] CN 106128503 A 20161116 - UNIV BEIJING
- [A] US 2017117041 A1 20170427 - HAMDIOUI SAID [NL], et al
- [I] KVATINSKY SHAHAR ET AL: "MAGIC-Memristor-Aided L", IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, IEEE, USA, vol. 61, no. 11, 1 November 2014 (2014-11-01), pages 895 - 899, XP011563648, ISSN: 1549-7747, [retrieved on 20141103], DOI: 10.1109/TCSII.2014.2357292
- See also references of WO 2021205452A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2021205452 A1 20211014; EP 4133598 A1 20230215; EP 4133598 A4 20240522; KR 20230007370 A 20230112; US 2023170909 A1 20230601
DOCDB simple family (application)
IL 2021050399 W 20210407; EP 21784903 A 20210407; KR 20227038910 A 20210407; US 202117916812 A 20210407