EP 4139964 A1 20230301 - SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND PROVIDING REDUCED GATE LEAKAGE AND ASSOCIATED METHODS
Title (en)
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND PROVIDING REDUCED GATE LEAKAGE AND ASSOCIATED METHODS
Title (de)
HALBLEITERBAUELEMENT MIT EINEM ÜBERGITTER UND MIT VERRINGERTEM GATE-LECKEN UND ZUGEHÖRIGE VERFAHREN
Title (fr)
DISPOSITIF À SEMI-CONDUCTEURS COMPRENANT UN SUPER-RÉSEAU ET FOURNISSANT UNE FUITE DE GRILLE RÉDUITE, ET PROCÉDÉS ASSOCIÉS
Publication
Application
Priority
- US 202016898589 A 20200611
- US 202016898564 A 20200611
- US 2021036711 W 20210610
Abstract (en)
[origin: WO2021252704A1] A semiconductor device may include a semiconductor substrate, and shallow trench isolation (STI) regions (70) in the semiconductor substrate defining an active region (71) therebetween in the semiconductor substrate, with the active region having rounded shoulders adjacent the STI regions with an interior angle of at least 125°. The semiconductor device may further include a superlattice (25) on the active region including stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may also include a semiconductor circuit on the substrate including the superlattice.
IPC 8 full level
H01L 29/15 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP)
H01L 21/76232 (2013.01); H01L 29/06 (2013.01); H01L 29/152 (2013.01); H01L 29/66651 (2013.01); H01L 29/78 (2013.01)
Citation (search report)
See references of WO 2021252704A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2021252704 A1 20211216; CN 115917754 A 20230404; EP 4139964 A1 20230301; TW 202213775 A 20220401; TW I789780 B 20230111
DOCDB simple family (application)
US 2021036711 W 20210610; CN 202180041847 A 20210610; EP 21737867 A 20210610; TW 110120506 A 20210604