EP 4141963 A4 20240522 - SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Title (en)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Title (de)
HALBLEITERBAUELEMENT UND VERFAHREN ZUM HERSTELLEN DES HALBLEITERBAUELEMENTS
Title (fr)
DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
Publication
Application
Priority
- JP 2020077020 A 20200424
- JP 2021016326 W 20210422
Abstract (en)
[origin: EP4141963A1] A semiconductor device A1 includes: a semiconductor layer 11 including a trench 10; an insulating film 12 covering an inner surface 10a of the trench; a conductor 13 embedded in the trench covered with the insulating film 12; a silicide layer 14; and a metal layer 15. A Schottky junction is formed by the silicide layer and a region being part of a semiconductor layer surface 11a and being adjacent to the trench. A region including an end face 14a of the silicide layer and an upper end face 12a of the insulating film is covered with the metal layer 15, with no gap between one part and another part of the metal layer on the region. The end face of the silicide layer is located at elevations higher than the upper end face of the insulating film covering an inner wall surface 10a1 of the trench. The metal layer and the silicide layer contain the same kind of metallic element.
IPC 8 full level
H01L 29/872 (2006.01); H01L 21/28 (2006.01); H01L 21/329 (2006.01); H01L 29/47 (2006.01)
CPC (source: EP KR US)
H01L 29/401 (2013.01 - KR US); H01L 29/47 (2013.01 - EP KR US); H01L 29/66143 (2013.01 - EP KR US); H01L 29/872 (2013.01 - KR); H01L 29/8725 (2013.01 - EP US)
Citation (search report)
- [XI] US 2012156862 A1 20120621 - RILEY LEE SPENCER [GB], et al
- [I] US 2014312452 A1 20141023 - LIN WEN-BIN [TW]
- See also references of WO 2021215505A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 4141963 A1 20230301; EP 4141963 A4 20240522; CN 115280517 A 20221101; JP WO2021215505 A1 20211028; KR 20220137747 A 20221012; US 2023178663 A1 20230608; WO 2021215505 A1 20211028
DOCDB simple family (application)
EP 21793142 A 20210422; CN 202180020186 A 20210422; JP 2021016326 W 20210422; JP 2022517095 A 20210422; KR 20227031038 A 20210422; US 202117920221 A 20210422