EP 4149897 A1 20230322 - LOW-E MATERIAL COMPRISING A THICK LAYER BASED ON SILICON OXIDE
Title (en)
LOW-E MATERIAL COMPRISING A THICK LAYER BASED ON SILICON OXIDE
Title (de)
LOW-E-MATERIAL MIT EINER DICKEN SCHICHT AUF BASIS VON SILICIUMOXID
Title (fr)
MATÉRIAU BAS ÉMISSIF COMPRENANT UNE COUCHE ÉPAISSE À BASE D'OXYDE DE SILICIUM
Publication
Application
Priority
- FR 2004679 A 20200512
- FR 2021050786 W 20210507
Abstract (en)
[origin: WO2021229165A1] The invention relates to material comprising a transparent substrate coated with a stack comprising at least one functional metal layer based on silver and at least two dielectric coatings, each dielectric coating comprising at least one dielectric layer, in such a way that each functional metal layer is positioned between two dielectric coatings, characterized in that the stack comprises a layer based on silicon oxide having a thickness of greater than or equal to 12 nm located directly in contact with the substrate.
IPC 8 full level
C03C 17/36 (2006.01); C23C 14/00 (2006.01)
CPC (source: EP US)
C03C 17/36 (2013.01 - EP); C03C 17/3618 (2013.01 - EP US); C03C 17/3636 (2013.01 - EP); C03C 17/3644 (2013.01 - EP US); C03C 17/3652 (2013.01 - EP); C03C 17/366 (2013.01 - EP US); C03C 17/3681 (2013.01 - EP US); C23C 14/024 (2013.01 - EP); C23C 14/08 (2013.01 - EP); C23C 14/086 (2013.01 - US); C23C 14/10 (2013.01 - EP US); C23C 14/185 (2013.01 - US); C23C 14/34 (2013.01 - EP); C23C 14/352 (2013.01 - US); F25D 23/065 (2013.01 - US); C03C 2217/944 (2013.01 - EP US); C03C 2218/156 (2013.01 - US)
Citation (search report)
See references of WO 2021229165A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
FR 3110160 A1 20211119; FR 3110160 B1 20231027; BR 112022021996 A2 20221213; CO 2022016074 A2 20221209; EP 4149897 A1 20230322; MX 2022014175 A 20221202; US 2023212065 A1 20230706; WO 2021229165 A1 20211118
DOCDB simple family (application)
FR 2004679 A 20200512; BR 112022021996 A 20210507; CO 2022016074 A 20221110; EP 21732439 A 20210507; FR 2021050786 W 20210507; MX 2022014175 A 20210507; US 202117924837 A 20210507