EP 4154306 A1 20230329 - METHOD FOR MANUFACTURING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE FOR RADIOFREQUENCY APPLICATIONS
Title (en)
METHOD FOR MANUFACTURING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE FOR RADIOFREQUENCY APPLICATIONS
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITER-AUF-ISOLATOR-SUBSTRATS FÜR HOCHFREQUENZANWENDUNGEN
Title (fr)
PROCEDE DE FABRICATION D'UN SUBSTRAT SEMI-CONDUCTEUR SUR ISOLANT POUR APPLICATIONS RADIOFREQUENCES
Publication
Application
Priority
- FR 2004971 A 20200518
- FR 2021050870 W 20210518
Abstract (en)
[origin: WO2021234277A1] The invention relates to a method for manufacturing a semiconductor-on-insulator substrate for radiofrequency applications, comprising the following steps: - forming a donor substrate (1) by epitaxial growth of a non-doped semiconductor layer (101) on a P-doped semiconductor seed substrate (100), - forming an electrically insulating layer (10) on the non-doped epitaxial semiconductor layer (101); - implanting ionic species through said electrically insulating layer (10) so as to form in the non-doped epitaxial semiconductor layer (101) an area of embrittlement (11) defining a thin semiconductor layer (12) to be transferred, - providing a supporting semiconductor substrate (2) having an electrical resistivity greater than or equal to 500 Ω.cm, - bonding the donor substrate (1) on the supporting substrate (2) via the electrically insulating layer (10), - detaching the donor substrate (1) along the area of embrittlement (11) so as to transfer the thin semiconductor layer (12) from the donor substrate (1) onto the supporting substrate (2).
IPC 8 full level
H01L 21/762 (2006.01); H01L 21/02 (2006.01)
CPC (source: EP KR US)
H01L 21/02032 (2013.01 - EP KR); H01L 21/76254 (2013.01 - EP KR US)
Citation (search report)
See references of WO 2021234277A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
FR 3110283 A1 20211119; FR 3110283 B1 20220415; CN 115552592 A 20221230; EP 4154306 A1 20230329; JP 2023526902 A 20230626; KR 20230011297 A 20230120; TW 202147400 A 20211216; US 2023207382 A1 20230629; WO 2021234277 A1 20211125
DOCDB simple family (application)
FR 2004971 A 20200518; CN 202180034312 A 20210518; EP 21732481 A 20210518; FR 2021050870 W 20210518; JP 2022565780 A 20210518; KR 20227039462 A 20210518; TW 110117327 A 20210513; US 202117998833 A 20210518