EP 4169054 A1 20230426 - SWITCHABLE-REACTOR UNIT, VARIABLE REACTOR, HIGH-FREQUENCY GENERATOR, AND IMPEDANCE ADJUSTMENT ASSEMBLY HAVING A SWITCHABLE-REACTOR UNIT
Title (en)
SWITCHABLE-REACTOR UNIT, VARIABLE REACTOR, HIGH-FREQUENCY GENERATOR, AND IMPEDANCE ADJUSTMENT ASSEMBLY HAVING A SWITCHABLE-REACTOR UNIT
Title (de)
SCHALTBARE-REAKTANZ-EINHEIT, VERÄNDERBARE REAKTANZ, HF-GENERATOR UND IMPEDANZANPASSUNGSANORDNUNG MIT EINER SCHALTBARE-REAKTANZ- EINHEIT
Title (fr)
UNITÉ DE RÉACTANCE COMMUTABLE, RÉACTANCE MODIFIABLE, GÉNÉRATEUR HF ET ENSEMBLE D'ADAPTATION D'IMPÉDANCE DOTÉ D'UNE UNITÉ DE RÉACTANCE COMMUTABLE
Publication
Application
Priority
- DE 202020103539 U 20200619
- EP 2021066633 W 20210618
Abstract (en)
[origin: WO2021255250A1] The invention relates to a switchable-reactor unit (100, 101), comprising: - a high-frequency terminal (112) for connecting to a transmission line (114) for the transmission of a signal at a frequency in the range of 1–200 MHz; and - a circuit assembly (116) having a plurality of switching elements (T1-T3) used in parallel, which each have a gate terminal (G), characterized in that each switching element is connected, via at least one individual reactor (C11-C13, C21-C23) assigned to the switching element and connected in series with the switching element, to the high-frequency terminal (12), wherein the switching elements can be or are controlled via their gate terminals in such a way that the switching elements switch simultaneously. The invention also relates to a variable reactor (18, 20, 22) comprising a switchable-reactor unit (100). The invention also relates to an impedance adjustment assembly (11), comprising a switchable-reactor unit (100, 101) and a controller (32). The invention also relates to a high-frequency power generator (40) comprising at least one variable reactor (18, 20, 22). The invention also relates to a plasma supply system (1), comprising a high-frequency power generator (40), a load (28) in the form of a plasma process operated with high frequency (HF), for coating or etching a substrate, and an impedance adjustment assembly (11). The invention also relates to a method for operating an impedance adjustment assembly (11) and/or a high-frequency power generator (40), e.g. in a plasma supply system (1).
IPC 8 full level
H01J 37/32 (2006.01); H03H 7/40 (2006.01)
CPC (source: EP KR US)
H01J 37/32183 (2013.01 - EP KR); H03H 7/0115 (2013.01 - US); H03H 7/1775 (2013.01 - US); H03H 7/383 (2013.01 - US); H03H 7/40 (2013.01 - EP KR)
Citation (search report)
See references of WO 2021255250A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
DE 202020103539 U1 20200629; CN 116235410 A 20230606; EP 4169054 A1 20230426; JP 2023530361 A 20230714; KR 20230020540 A 20230210; US 2023216467 A1 20230706; WO 2021255250 A1 20211223
DOCDB simple family (application)
DE 202020103539 U 20200619; CN 202180059468 A 20210618; EP 2021066633 W 20210618; EP 21735893 A 20210618; JP 2022578784 A 20210618; KR 20237001000 A 20210618; US 202218066289 A 20221215