EP 4172122 A1 20230503 - MATERIAL COMPRISING A STACK WITH A THIN ZINC-BASED OXIDE DIELECTRIC SUBLAYER AND METHOD FOR DEPOSITING SAID MATERIAL
Title (en)
MATERIAL COMPRISING A STACK WITH A THIN ZINC-BASED OXIDE DIELECTRIC SUBLAYER AND METHOD FOR DEPOSITING SAID MATERIAL
Title (de)
MATERIAL MIT EINEM STAPEL MIT EINER DÜNNEN DIELEKTRISCHEN SCHICHT AUS ZINKBASIERTEM OXID UND VERFAHREN ZUR ABSCHEIDUNG DIESES MATERIALS
Title (fr)
MATERIAU COMPORTANT UN EMPILEMENT A SOUS-COUCHE DIELECTRIQUE FINE D'OXIDE A BASE DE ZINC ET PROCEDE DE DEPOT DE CE MATERIAU
Publication
Application
Priority
- FR 2006607 A 20200624
- FR 2021051081 W 20210616
Abstract (en)
[origin: WO2021260295A1] The invention relates to a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) comprising at least one metal functional layer (140) and comprising: - an underlayer of zinc-based oxide, ZnO (129), between 0.3 and 4.4 nm thick; - a dielectric underlayer of silicon-based nitride, Si3N4 (127), between 10.0 and 50.0 nm thick; - an overlayer of zinc-based oxide, ZnO (161), between 2.0 and 10.0 nm thick; - a dielectric overlayer (165); - a capping layer of titanium-based oxide, TiOx (150), located on and in contact with said functional layer (140).
IPC 8 full level
C03C 17/36 (2006.01)
CPC (source: EP)
C03C 17/36 (2013.01); C03C 17/3618 (2013.01); C03C 17/3626 (2013.01); C03C 17/3642 (2013.01); C03C 17/3644 (2013.01); C03C 17/366 (2013.01); C03C 2217/944 (2013.01)
Citation (search report)
See references of WO 2021260295A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
FR 3111892 A1 20211231; FR 3111892 B1 20220722; EP 4172122 A1 20230503; WO 2021260295 A1 20211230
DOCDB simple family (application)
FR 2006607 A 20200624; EP 21740592 A 20210616; FR 2021051081 W 20210616