EP 4176462 A1 20230510 - SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE BONDING INTERFACE, AND ASSOCIATED MANUFACTURING METHOD
Title (en)
SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE BONDING INTERFACE, AND ASSOCIATED MANUFACTURING METHOD
Title (de)
HALBLEITERSTRUKTUR MIT EINER ELEKTRISCH LEITENDEN BONDSCHNITTSTELLE UND ZUGEHÖRIGES HERSTELLUNGSVERFAHREN
Title (fr)
STRUCTURE SEMI-CONDUCTRICE COMPRENANT UNE INTERFACE DE COLLAGE ELECTRIQUEMENT CONDUCTRICE, ET PROCEDE DE FABRICATION ASSOCIE
Publication
Application
Priority
- FR 2007138 A 20200706
- FR 2021051023 W 20210608
Abstract (en)
[origin: WO2022008809A1] The invention relates to a semiconductor structure (100) that comprises a useful layer (10) made of monocrystalline semiconductor material and extending along a main plane (x, y), a support substrate (30) made of semiconductor material, and an interface area (20) between the useful layer (10) and the support substrate (30), the support substrate extending parallel to the main plane (x, y), the structure (100) being characterised in that the interface area (20) comprises nodules (21) that: - are electrically conductive, in that they contain a metal material forming ohmic contact with the useful layer (10) and the support substrate (30); - have a thickness, along an axis (z) normal to the main plane (x, y), of less than or equal to 30 nm; - are separate or adjoining, the separate nodules (21) being separated from each other by regions (22) of direct contact between the useful layer (10) and the support substrate (30). The invention also relates to a method for manufacturing the structure (100).
IPC 8 full level
H01L 21/18 (2006.01)
CPC (source: EP US)
H01L 21/02002 (2013.01 - EP); H01L 21/02016 (2013.01 - US); H01L 21/0485 (2013.01 - US); H01L 21/185 (2013.01 - EP); H01L 21/187 (2013.01 - US); H01L 21/324 (2013.01 - US); H01L 24/83 (2013.01 - US); H01L 2224/83894 (2013.01 - US); H01L 2224/83948 (2013.01 - US); H01L 2924/10253 (2013.01 - US); H01L 2924/10272 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
FR 3112240 A1 20220107; FR 3112240 B1 20220603; CN 116250061 A 20230609; EP 4176462 A1 20230510; JP 2023532359 A 20230727; KR 20230035366 A 20230313; TW 202217916 A 20220501; US 2024266172 A1 20240808; WO 2022008809 A1 20220113
DOCDB simple family (application)
FR 2007138 A 20200706; CN 202180048657 A 20210608; EP 21737714 A 20210608; FR 2021051023 W 20210608; JP 2023500255 A 20210608; KR 20237004260 A 20210608; TW 110116660 A 20210507; US 202118004594 A 20210608