EP 4193008 A1 20230614 - METHOD AND DEVICE FOR GROWING A RARE EARTH SESQUIOXIDE CRYSTAL
Title (en)
METHOD AND DEVICE FOR GROWING A RARE EARTH SESQUIOXIDE CRYSTAL
Title (de)
VERFAHREN UND VORRICHTUNG ZUM ZÜCHTEN EINES SELTENERD-SESQUIOXID-KRISTALLS
Title (fr)
PROCÉDÉ ET DISPOSITIF DE CROISSANCE D'UN CRISTAL DE SESQUIOXYDE DE TERRES RARES
Publication
Application
Priority
- DE 102020120715 A 20200805
- EP 2021068687 W 20210706
Abstract (en)
[origin: WO2022028800A1] The invention relates to a method for growing a rare earth sesquioxide crystal with a cubic crystal structure from a melt. The rare earth sesquioxide crystal contains at least 5% yttrium oxide and at least 5% scandium oxide such that the liquidus temperature of the crystal lies below 2400°C. Alternatively, the rare earth sesquioxide crystal can also contain yttrium oxide and at least 5% scandium oxide, and the proportions of yttrium oxide and scandium oxide can be selected in a starting material such that the rare earth sesquioxide crystal to be grown has a liquidus temperature below 2400°C. The starting material can be melted at a temperature of 2400°C or lower in a crucible which consists of a material that has a melting temperature below 3000°C. The rare earth sesquioxide crystal can be grown from the molten starting material using a crystal growing method, for example the Czochralski method or the HEM method. A crucible-free growth of the rare earth sesquioxide crystal is also possible at a temperature of 2400°C or lower, for example using an optical zone melting process.
IPC 8 full level
C30B 15/10 (2006.01); C30B 29/22 (2006.01); C30B 35/00 (2006.01)
CPC (source: EP)
C30B 15/10 (2013.01); C30B 29/22 (2013.01); C30B 35/002 (2013.01)
Citation (search report)
See references of WO 2022028800A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
DE 102020120715 A1 20220210; EP 4193008 A1 20230614; WO 2022028800 A1 20220210
DOCDB simple family (application)
DE 102020120715 A 20200805; EP 2021068687 W 20210706; EP 21748512 A 20210706