EP 4194592 A1 20230614 - SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Title (en)
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Title (de)
HALBLEITERLAMINAT, HALBLEITERELEMENT UND VERFAHREN ZUR HERSTELLUNG DES HALBLEITERELEMENTS
Title (fr)
STRATIFIÉ SEMI-CONDUCTEUR, ÉLÉMENT SEMI-CONDUCTEUR, ET PROCÉDÉ DE PRODUCTION D'ÉLÉMENT SEMI-CONDUCTEUR
Publication
Application
Priority
- JP 2020133535 A 20200806
- JP 2021043094 A 20210317
- JP 2021023252 W 20210618
Abstract (en)
The present invention is a semiconductor laminate at least including: a base; a buffer layer; and a crystalline metal oxide semiconductor film containing at least one metal element and having a corundum structure, the semiconductor laminate having the buffer layer on a main surface of the base directly or via another layer, the semiconductor laminate having the crystalline metal oxide semiconductor film on the buffer layer. The buffer layer is a laminate structure of a plurality of buffer films each with a different composition, and at least two buffer films of the plurality of buffer films have a film thickness of 200 nm or more and 650 nm or less. This provides a semiconductor laminate including a high quality corundum crystalline metal oxide semiconductor film that experiences less crystal defects, warpage, and cracks even when formed by heteroepitaxial growth.
IPC 8 full level
C30B 29/16 (2006.01); C23C 16/40 (2006.01); H01L 21/205 (2006.01); H01L 21/208 (2006.01); H01L 21/338 (2006.01); H01L 21/365 (2006.01); H01L 21/368 (2006.01); H01L 29/12 (2006.01); H01L 29/47 (2006.01); H01L 29/739 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/812 (2006.01); H01L 29/872 (2006.01); H01L 33/42 (2010.01)
CPC (source: EP KR US)
C23C 16/40 (2013.01 - EP US); C23C 16/448 (2013.01 - EP); C30B 25/04 (2013.01 - US); C30B 25/183 (2013.01 - EP); C30B 29/16 (2013.01 - EP KR US); H01L 21/0242 (2013.01 - EP KR US); H01L 21/02483 (2013.01 - EP KR US); H01L 21/02505 (2013.01 - EP KR US); H01L 21/0251 (2013.01 - EP KR US); H01L 21/02565 (2013.01 - EP KR US); H01L 21/02628 (2013.01 - KR); H01L 29/04 (2013.01 - EP); H01L 29/24 (2013.01 - EP); H01L 29/47 (2013.01 - KR); H01L 29/66848 (2013.01 - KR); H01L 29/739 (2013.01 - KR); H01L 29/7395 (2013.01 - EP); H01L 29/778 (2013.01 - KR); H01L 29/7786 (2013.01 - EP); H01L 29/78 (2013.01 - KR); H01L 29/7828 (2013.01 - EP); H01L 29/812 (2013.01 - KR); H01L 29/872 (2013.01 - EP KR US); H01L 33/12 (2013.01 - EP); H01L 33/42 (2013.01 - KR); H01L 33/16 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
EP 4194592 A1 20230614; CN 116157550 A 20230523; JP 2022070975 A 20220513; JP 2023169231 A 20231129; JP 7346626 B2 20230919; KR 20230048008 A 20230410; US 2023245883 A1 20230803; WO 2022030114 A1 20220210
DOCDB simple family (application)
EP 21854515 A 20210618; CN 202180057772 A 20210618; JP 2021023252 W 20210618; JP 2022021858 A 20220216; JP 2023144667 A 20230906; KR 20237003593 A 20210618; US 202118018913 A 20210618