Title (en)

HIGH-VOLTAGE DEVICE AND METHOD FOR INCREASING THE DIELECTRIC STRENGTH IN THE HIGH-VOLTAGE DEVICE

Title (de)

HOCHSPANNUNGSGERÄT UND VERFAHREN ZUR ERHÖHUNG DER DIELEKTRISCHEN FESTIGKEIT IN DEM HOCHSPANNUNGSGERÄT

Title (fr)

DISPOSITIF HAUTE TENSION ET PROCÉDÉ POUR AUGMENTER LA RÉSISTANCE DIÉLECTRIQUE DANS LE DISPOSITIF HAUTE TENSION

Publication

EP 4197019 A1 20230621 (DE)

Application

EP 21783404 A 20210913

Priority

• DE 102020212385 A 20200930
• EP 2021075089 W 20210913

Abstract (en)

[origin: WO2022069202A1] The invention relates to a high-voltage device (1), comprising an encapsulation housing (2) and comprising at least one bushing (3) for at least one conductor (4), through which current flows, into the encapsulation housing (2) and/or out of the encapsulation housing (2). At least one electrode (5) at free potential is surrounded by the bushing (3). The at least one electrode (5) at free potential increases the dielectric strength in the high-voltage device, in particular in the region of the bushing (3).

IPC 8 full level

H01H 33/02 (2006.01); H01B 17/42 (2006.01); H01H 33/56 (2006.01)

CPC (source: EP US)

H01H 33/021 (2013.01 - US); H01H 33/025 (2013.01 - EP US); H01H 33/56 (2013.01 - US); H01B 17/42 (2013.01 - EP); H01H 33/56 (2013.01 - EP); H01H 2033/566 (2013.01 - EP US)

Citation (search report)

See references of WO 2022069202A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

Designated validation state (EPC)

KH MA MD TN

DOCDB simple family (publication)

DE 102020212385 A1 20220331; CN 116235271 A 20230606; EP 4197019 A1 20230621; JP 2023543238 A 20231013; US 2023368989 A1 20231116; WO 2022069202 A1 20220407

DOCDB simple family (application)

DE 102020212385 A 20200930; CN 202180067413 A 20210913; EP 2021075089 W 20210913; EP 21783404 A 20210913; JP 2023519120 A 20210913; US 202118029445 A 20210913