EP 4197965 A1 20230621 - METHOD FOR STRUCTURAL LAYER FABRICATION IN MICROMECHANICAL DEVICES
Title (en)
METHOD FOR STRUCTURAL LAYER FABRICATION IN MICROMECHANICAL DEVICES
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER STRUKTURSCHICHT IN MIKROMECHANISCHEN BAUELEMENTEN
Title (fr)
PROCÉDÉ DE FABRICATION DE COUCHES STRUCTURELLES DANS DES DISPOSITIFS MICROMÉCANIQUES
Publication
Application
Priority
FI 20216289 A 20211216
Abstract (en)
The disclosure relates to a method for manufacturing a structural layer in a silicon wafer, wherein the at least two areas are vertically recessed to the at least two recess depths, and wherein the first recess depth is greater than the second recess depth. The method comprises the steps of (a) forming a silicon dioxide pattern, a mask layer and a silicon dioxide pad layer, (b) etching the structural layer in a at least one main LOCOS oxidation process, and (c) removing the formed layers exposing the recessed structural layer. The manufactured structural layer has a bump structure with the recess depth smaller than the second recess depth, and the recessed area has no edge steps.
IPC 8 full level
B81C 1/00 (2006.01)
CPC (source: EP US)
B81B 3/001 (2013.01 - US); B81C 1/00103 (2013.01 - EP); B81C 1/00968 (2013.01 - US); B81C 2201/0133 (2013.01 - US); B81C 2201/0178 (2013.01 - US)
Citation (applicant)
WO 2016044932 A1 20160331 - MOTION ENGINE INC [CA]
Citation (search report)
[X] WO 2007015218 A2 20070208 - KOLO TECHNOLOGIES INC [US], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
DOCDB simple family (application)
EP 22209854 A 20221128; US 202218066755 A 20221215