EP 4220301 A1 20230802 - I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN
Title (en)
I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN
Title (de)
I-LINE NEGATIVE PHOTORESISTZUSAMMENSETZUNG ZUR REDUZIERUNG DES HÖHENUNTERSCHIEDS ZWISCHEN ZENTRUM UND RAND UND REDUZIERUNG VON LER SOWIE I-LINE NEGATIVE PHOTORESISTZUSAMMENSETZUNG ZUR VERBESSERUNG DES PROZESSSPIELRAUMS
Title (fr)
COMPOSITION DE RÉSINE PHOTOSENSIBLE NÉGATIVE « I-LINE » SERVANT À RÉDUIRE LA DIFFÉRENCE DE HAUTEUR ENTRE LE CENTRE ET LE BORD ET À RÉDUIRE LA RUGOSITÉ DE BORD DE LIGNE (LER), ET COMPOSITION DE RÉSINE PHOTOSENSIBLE NÉGATIVE « I-LINE » SERVANT À AMÉLIORER LA MARGE DE TRAITEMENT
Publication
Application
Priority
- KR 20200123788 A 20200924
- KR 2021011426 W 20210826
Abstract (en)
The present invention is for providing an I-line negative photoresist composition exhibiting better process margin than a conventional I-line negative photoresist, has the purpose of alleviating a problem in which the center of a contact hole pattern is dented during pattern formation, and relates to an I-line negative photoresist composition for reducing the height difference, between the center and the edge, formed by the denting of the center and for reducing line edge roughness (LER) during pattern formation in a semiconductor process, the composition comprising: a polymer resin; a compound represented by chemical formula 1; a crosslinking agent; a photoacid generator; an acid diffusion inhibitor; and a solvent.
IPC 8 full level
G03F 7/038 (2006.01); G03F 7/004 (2006.01)
CPC (source: EP KR US)
G03F 7/0045 (2013.01 - KR US); G03F 7/0382 (2013.01 - EP KR US); G03F 7/0385 (2013.01 - KR)
Citation (search report)
See references of WO 2022065713A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
EP 4220301 A1 20230802; CN 116194842 A 20230530; JP 2023540966 A 20230927; KR 102256837 B1 20210528; TW 202225843 A 20220701; TW I776658 B 20220901; US 2023350293 A1 20231102; WO 2022065713 A1 20220331
DOCDB simple family (application)
EP 21872743 A 20210826; CN 202180064462 A 20210826; JP 2023514836 A 20210826; KR 20200123788 A 20200924; KR 2021011426 W 20210826; TW 110131755 A 20210826; US 202118044390 A 20210826