EP 4220734 A1 20230802 - WIDE BAND GAP TRANSISTOR WITH NANOLAMINATED INSULATING GATE STRUTCTURE AND PROCESS FOR MANUFACTURING A WIDE BAND GAP TRANSISTOR

Title (en)

WIDE BAND GAP TRANSISTOR WITH NANOLAMINATED INSULATING GATE STRUTCTURE AND PROCESS FOR MANUFACTURING A WIDE BAND GAP TRANSISTOR

Title (de)

TRANSISTOR MIT BREITER BANDLÜCKE MIT NANOLAMINIERTER ISOLIERENDER GATE-STRUKTUR UND VERFAHREN ZUR HERSTELLUNG EINES TRANSISTORS MIT BREITER BANDLÜCKE

Title (fr)

TRANSISTOR À LARGE BANDE INTERDITE À STRUCTURE DE GRILLE ISOLANTE NANOSTRATIFIÉE ET PROCÉDÉ DE FABRICATION D'UN TRANSISTOR À LARGE BANDE INTERDITE

Publication

EP 4220734 A1 20230802 (EN)

Application

EP 23152421 A 20230119

Priority

IT 202200001478 A 20220128

Abstract (en)

A wide band gap transistor includes a semiconductor structure (2), having at least one wide band gap semiconductor layer (14, 16) of gallium nitride (GaN) or silicon carbide (SiC), an insulating gate structure (8) and a gate electrode (7), separated from the semiconductor structure (2) by the insulating gate structure (8). The insulating gate structure (8) contains a mixture of aluminum, hafnium and oxygen and is completely amorphous.

IPC 8 full level

H01L 29/51 (2006.01); H01L 21/04 (2006.01); H01L 21/28 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01)

CPC (source: EP US)

H01L 21/02178 (2013.01 - US); H01L 21/02181 (2013.01 - US); H01L 21/022 (2013.01 - US); H01L 21/0228 (2013.01 - US); H01L 21/049 (2013.01 - EP); H01L 21/28185 (2013.01 - EP US); H01L 21/28264 (2013.01 - EP); H01L 29/1608 (2013.01 - EP); H01L 29/2003 (2013.01 - EP US); H01L 29/205 (2013.01 - US); H01L 29/401 (2013.01 - US); H01L 29/513 (2013.01 - US); H01L 29/517 (2013.01 - EP US); H01L 29/66462 (2013.01 - EP US); H01L 29/7786 (2013.01 - EP US); H01L 29/7802 (2013.01 - EP); H01L 29/4236 (2013.01 - EP); H01L 29/513 (2013.01 - EP); H01L 29/66068 (2013.01 - EP)

Citation (search report)

[A] CAO DUO ET AL: "Interfacial and electrical characteristics of tetragonal HfO2/Al2O3 multilayer grown on AlGaN/GaN", JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS, CHAPMAN AND HALL, LONDON, GB, vol. 29, no. 9, 10 February 2018 (2018-02-10), pages 7644 - 7650, XP037126608, ISSN: 0957-4522, [retrieved on 20180210], DOI: 10.1007/S10854-018-8757-1
[A] BONGMOOK LEE ET AL: "Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer", SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM (ISDRS), 2011 INTERNATIONAL, IEEE, 7 December 2011 (2011-12-07), pages 1 - 2, XP032097291, ISBN: 978-1-4577-1755-0, DOI: 10.1109/ISDRS.2011.6135162
[A] QINGWEN SONG ET AL: "Atomic layer deposited high-HfAlO as an alternative gate dielectric for 4H-SiC MIS based transistors", SCIENCE CHINA TECHNOLOGICAL SCIENCES, SP SCIENCE CHINA PRESS, HEIDELBERG, vol. 55, no. 3, 28 December 2011 (2011-12-28), pages 606 - 609, XP035018598, ISSN: 1869-1900, DOI: 10.1007/S11431-011-4697-1
[A] LIU XINKE ET AL: "Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 99, no. 9, 29 August 2011 (2011-08-29), pages 93504 - 93504, XP012153851, ISSN: 0003-6951, [retrieved on 20110901], DOI: 10.1063/1.3633104

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

Designated validation state (EPC)

KH MA MD TN

DOCDB simple family (publication)

EP 4220734 A1 20230802; IT 202200001478 A1 20230728; JP 2023110900 A 20230809; US 2023246086 A1 20230803

DOCDB simple family (application)

EP 23152421 A 20230119; IT 202200001478 A 20220128; JP 2023010393 A 20230126; US 202318156120 A 20230118