EP 4226409 A1 20230816 - METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER
Title (en)
METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES SUBSTRATS FÜR EPITAKTISCHES WACHSTUM EINER GALLIUMBASIERTEN III-N-LEGIERUNGSSCHICHT
Title (fr)
PROCÉDÉ DE FABRICATION D'UN SUBSTRAT POUR LA CROISSANCE ÉPITAXIALE D'UNE COUCHE D'UN ALLIAGE III-N À BASE DE GALLIUM
Publication
Application
Priority
- FR 2010206 A 20201006
- FR 2021051709 W 20211004
Abstract (en)
[origin: WO2022074318A1] The invention relates to a method for producing a substrate for the epitaxial growth of a gallium-based III-N alloy layer, comprising the following consecutive steps: - providing a donor substrate (10) of semi-insulating monocrystalline silicon carbide, - implanting ionic species in the donor substrate (10) so as to form a zone of weakness (12) defining a thin layer (11) of semi-insulating monocrystalline SiC to be transferred, - bonding the donor substrate (10) to a first receiving substrate (20) by means of a bonding layer (21), - detaching the donor substrate (10) along the zone of weakness (12) so as to transfer the thin layer (11) of semi-insulating monocrystalline SiC on to the first receiving substrate (20), - forming an additional layer (13) of semi-insulating SiC on the transferred thin layer (11), - bonding the additional layer (13) to a second receiving substrate (40) with high electrical resistivity, - removing at least a portion of the bonding layer (21) so as to detach the first receiving substrate (20) and expose the layer (11) of transferred semi-insulating monocrystalline SiC.
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/04 (2006.01)
CPC (source: EP KR US)
C30B 25/186 (2013.01 - US); C30B 29/36 (2013.01 - US); C30B 29/406 (2013.01 - US); C30B 31/22 (2013.01 - US); H01L 21/02002 (2013.01 - EP KR US); H01L 21/02378 (2013.01 - US); H01L 21/0254 (2013.01 - US); H01L 29/66462 (2013.01 - US); H01L 21/02378 (2013.01 - EP KR); H01L 21/0254 (2013.01 - EP KR); H01L 21/02658 (2013.01 - EP KR); H01L 21/76254 (2013.01 - KR); H01L 29/66462 (2013.01 - EP KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
FR 3114909 A1 20220408; FR 3114909 B1 20230317; CN 116438629 A 20230714; EP 4226409 A1 20230816; JP 2023542884 A 20231012; KR 20230080476 A 20230607; TW 202215504 A 20220416; US 2023411140 A1 20231221; WO 2022074318 A1 20220414
DOCDB simple family (application)
FR 2010206 A 20201006; CN 202180067958 A 20211004; EP 21801585 A 20211004; FR 2021051709 W 20211004; JP 2023517668 A 20211004; KR 20237015262 A 20211004; TW 110128374 A 20210802; US 202118248169 A 20211004