Global Patent Index - EP 4250345 A1

EP 4250345 A1 20230927 - SUBSTRATE PROCESSING APPARATUS

Title (en)

SUBSTRATE PROCESSING APPARATUS

Title (de)

SUBSTRATVERARBEITUNGSVORRICHTUNG

Title (fr)

APPAREIL DE TRAITEMENT DE SUBSTRAT

Publication

EP 4250345 A1 20230927 (EN)

Application

EP 23162985 A 20230320

Priority

JP 2022047869 A 20220324

Abstract (en)

A substrate processing apparatus delivers a gas between a lower surface (92) of a substrate (9) and a base surface (210) of a base part (21) to form an airflow (93) flowing radially outward and to cause a pressure drop in a space (90) between the substrate (9) and the base part (21) by the Bernoulli effect. The base surface (210) includes a second surface (212) sloping upward in a radially outward direction. A third surface (213) slopes downward in a radially outward direction from the outer peripheral edge of the second surface (212). A fourth surface (214) is an annular surface contiguous to the lower edge of the third surface (213). The fourth surface (214) expands radially outward outside the outer peripheral edge of the substrate (9) in the radial direction. Accordingly, it is possible to suppress adhesion of a processing liquid to the lower surface (92) of the substrate (9) and to improve the stability of holding the substrate (9).

IPC 8 full level

H01L 21/687 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01)

CPC (source: CN EP US)

B08B 3/02 (2013.01 - US); B08B 3/04 (2013.01 - US); B08B 5/02 (2013.01 - US); B08B 11/02 (2013.01 - US); B08B 13/00 (2013.01 - US); H01L 21/67017 (2013.01 - CN); H01L 21/67051 (2013.01 - EP); H01L 21/6708 (2013.01 - CN); H01L 21/6838 (2013.01 - EP); H01L 21/68735 (2013.01 - EP); H01L 21/68742 (2013.01 - CN); H01L 21/6875 (2013.01 - EP); H01L 21/68792 (2013.01 - CN)

Citation (applicant)

JP 2009142818 A 20090702 - SEZ AG

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA

Designated validation state (EPC)

KH MA MD TN

DOCDB simple family (publication)

EP 4250345 A1 20230927; CN 116805606 A 20230926; JP 2023141513 A 20231005; TW 202342188 A 20231101; US 2023302501 A1 20230928

DOCDB simple family (application)

EP 23162985 A 20230320; CN 202310293124 A 20230323; JP 2022047869 A 20220324; TW 112110599 A 20230322; US 202318188976 A 20230323