EP 4252273 A1 20231004 - METHOD FOR PRODUCING A TRANSISTOR WITH A HIGH DEGREE OF ELECTRON MOBILITY, AND PRODUCED TRANSISTOR
Title (en)
METHOD FOR PRODUCING A TRANSISTOR WITH A HIGH DEGREE OF ELECTRON MOBILITY, AND PRODUCED TRANSISTOR
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES TRANSISTORS MIT HOHER ELEKTRONENBEWEGLICHKEIT UND HERGESTELLTER TRANSISTOR
Title (fr)
PROCÉDÉ DE FABRICATION D'UN TRANSISTOR À HAUT DEGRÉ DE MOBILITÉ D'ÉLECTRONS, ET TRANSISTOR PRODUIT
Publication
Application
Priority
- DE 102020214767 A 20201125
- EP 2021082913 W 20211125
Abstract (en)
[origin: WO2022112378A1] The invention relates to a method for producing a transistor with a high degree of electron mobility and to a transistor with a high degree of electron mobility. The method is characterized in that an epitaxial layer is first grown on a flat substrate, and the flat substrate is then completely removed from the bottom of the epitaxial layer, wherein a thermally conductive layer is applied onto the bottom of the epitaxial layer such that the thermally conductive layer contacts at least 80%, preferably at least 90%, particularly preferably at least 95%, in particular 100%, of the bottom of the epitaxial layer. The method is simple and inexpensive to carry out and provides a transistor which has a high degree of electron mobility, an improved electric output without backgating, and an improved heat dissipation. The method additionally allows a transistor to be provided with a vertical transistor structure.
IPC 8 full level
H01L 21/336 (2006.01); H01L 21/338 (2006.01); H01L 23/373 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 23/3731 (2013.01 - US); H01L 23/3732 (2013.01 - US); H01L 29/66462 (2013.01 - EP US); H01L 29/66522 (2013.01 - EP US); H01L 29/66666 (2013.01 - US); H01L 29/7786 (2013.01 - US); H01L 29/7827 (2013.01 - US); H01L 23/36 (2013.01 - EP); H01L 29/2003 (2013.01 - EP US); H01L 29/24 (2013.01 - EP); H01L 29/7786 (2013.01 - EP); H01L 29/7828 (2013.01 - EP)
Citation (search report)
See references of WO 2022112378A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022112378 A1 20220602; CN 116635987 A 20230822; DE 102020214767 A1 20220525; EP 4252273 A1 20231004; JP 2023550520 A 20231201; US 2023420542 A1 20231228
DOCDB simple family (application)
EP 2021082913 W 20211125; CN 202180079137 A 20211125; DE 102020214767 A 20201125; EP 21820487 A 20211125; JP 2023531634 A 20211125; US 202118253358 A 20211125