EP 4256599 A1 20231011 - DISLOCATION TYPE AND DENSITY DISCRIMINATION IN SEMICONDUCTOR MATERIALS USING CATHODOLUMINESCENCE MEASUREMENTS
Title (en)
DISLOCATION TYPE AND DENSITY DISCRIMINATION IN SEMICONDUCTOR MATERIALS USING CATHODOLUMINESCENCE MEASUREMENTS
Title (de)
VERSETZUNGSTYP UND DICHTEUNTERSCHEIDUNG IN HALBLEITERMATERIALIEN MITTELS KATHODOLUMINESZENZMESSUNGEN
Title (fr)
DISCRIMINATION DE TYPE DE DISLOCATION ET DE DENSITÉ DANS DES MATÉRIAUX SEMI-CONDUCTEURS À L'AIDE DE MESURES DE CATHODOLUMINESCENCE
Publication
Application
Priority
- US 202063121752 P 20201204
- US 202117537422 A 20211129
- IB 2021061339 W 20211204
Abstract (en)
[origin: WO2022118294A1] A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.
IPC 8 full level
H01J 37/22 (2006.01)
CPC (source: EP KR)
H01J 37/228 (2013.01 - EP KR); H01J 2237/2808 (2013.01 - EP KR); H01J 2237/2817 (2013.01 - EP KR)
Citation (search report)
See references of WO 2022118294A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022118294 A1 20220609; EP 4256599 A1 20231011; JP 2023551972 A 20231213; KR 20230150944 A 20231031; TW 202236343 A 20220916; TW I808554 B 20230711
DOCDB simple family (application)
IB 2021061339 W 20211204; EP 21824057 A 20211204; JP 2023534116 A 20211204; KR 20237022166 A 20211204; TW 110145346 A 20211203