EP 4258363 A4 20240214 - SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
Title (en)
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
Title (de)
HALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
IB 2020000995 W 20201201
Abstract (en)
[origin: EP4258363A1] A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/10 (2006.01)
CPC (source: EP US)
H01L 29/0638 (2013.01 - US); H01L 29/105 (2013.01 - EP); H01L 29/1608 (2013.01 - EP US); H01L 29/4236 (2013.01 - EP US); H01L 29/66068 (2013.01 - EP); H01L 29/66704 (2013.01 - US); H01L 29/7835 (2013.01 - EP US)
Citation (search report)
- [Y] DE 102004014928 A1 20051013 - AUSTRIAMICROSYSTEMS AG [AT]
- [Y] US 2020020775 A1 20200116 - NI WEI [JP], et al
- [Y] US 4007478 A 19770208 - YAGI HAJIME
- See also references of WO 2022118055A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
EP 4258363 A1 20231011; EP 4258363 A4 20240214; CN 116635984 A 20230822; CN 116635984 B 20240315; JP WO2022118055 A1 20220609; US 11973108 B2 20240430; US 2024055475 A1 20240215; WO 2022118055 A1 20220609; WO 2022118055 A8 20230309
DOCDB simple family (application)
EP 20963817 A 20201201; CN 202080107575 A 20201201; IB 2020000995 W 20201201; JP 2022566508 A 20201201; US 202018039610 A 20201201