EP 4264672 A1 20231025 - ELECTRONIC SEMICONDUCTOR COMPONENT, AND PROCESS FOR MANUFACTURING A PRETREATED COMPOSITE SUBSTRATE FOR AN ELECTRONIC SEMICONDUCTOR COMPONENT
Title (en)
ELECTRONIC SEMICONDUCTOR COMPONENT, AND PROCESS FOR MANUFACTURING A PRETREATED COMPOSITE SUBSTRATE FOR AN ELECTRONIC SEMICONDUCTOR COMPONENT
Title (de)
ELEKTRONISCHES HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES VORBEHANDELTEN VERBUNDSUBSTRATS FÜR EIN ELEKTRONISCHES HALBLEITERBAUELEMENT
Title (fr)
COMPOSANT SEMI-CONDUCTEUR ÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION D'UN SUBSTRAT COMPOSITE PRÉTRAITÉ POUR COMPOSANT SEMI-CONDUCTEUR ÉLECTRONIQUE
Publication
Application
Priority
- DE 102020134222 A 20201218
- DE 102021109690 A 20210416
- EP 2021085296 W 20211210
Abstract (en)
[origin: WO2022128818A1] The electronic semiconductor component (50) includes a crystal (53) made of monocrystalline SiC, wherein the orientation of at least some subareas of a first surface (58) of the SiC crystal (53) extends substantially in a direction running perpendicularly to the c direction (c) of the crystal structure of the crystal (53). Also disclosed is a manufacturing process.
IPC 8 full level
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/18 (2006.01); H01L 29/04 (2006.01)
CPC (source: EP US)
H01L 21/02002 (2013.01 - EP); H01L 21/046 (2013.01 - EP); H01L 21/0465 (2013.01 - US); H01L 21/187 (2013.01 - EP); H01L 29/045 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US)
Citation (search report)
See references of WO 2022128818A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022128818 A1 20220623; EP 4264672 A1 20231025; JP 2023553477 A 20231221; US 2024055472 A1 20240215
DOCDB simple family (application)
EP 2021085296 W 20211210; EP 21836128 A 20211210; JP 2023535862 A 20211210; US 202118267872 A 20211210