EP 4271857 A1 20231108 - METHOD FOR PRODUCING AN ARTIFICIAL SAPPHIRE SINGLE CRYSTAL
Title (en)
METHOD FOR PRODUCING AN ARTIFICIAL SAPPHIRE SINGLE CRYSTAL
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES KÜNSTLICHEN SAPHIR-EINKRISTALLS
Title (fr)
PROCÉDÉ DE PRODUCTION D'UN MONOCRISTAL DE SAPHIR ARTIFICIEL
Publication
Application
Priority
- AT 511462020 A 20201229
- AT 2021060490 W 20211228
Abstract (en)
[origin: WO2022140808A1] The invention relates to a method for producing an artificial sapphire single crystal. Starting with the step of crystal growth, a temperature difference ΔΤ, selected from a range of 1 °C to 60 °C, is set between an Al2O3 melt surface and a boundary surface of the growing sapphire single crystal to the Al2O3 melt, and this temperature difference ΔΤ is kept constant at least over a greater part of the duration of the crystal growth.
IPC 8 full level
C30B 11/00 (2006.01); C30B 29/20 (2006.01)
CPC (source: AT EP)
C30B 11/003 (2013.01 - EP); C30B 11/006 (2013.01 - AT EP); C30B 29/20 (2013.01 - AT EP)
Citation (search report)
See references of WO 2022140808A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022140808 A1 20220707; AT 524603 A1 20220715; AT 524603 B1 20230515; EP 4271857 A1 20231108
DOCDB simple family (application)
AT 2021060490 W 20211228; AT 511462020 A 20201229; EP 21840775 A 20211228