EP 4272264 A1 20231108 - PHOTODIODE STRUCTURE AND METHOD FOR PRODUCING SAME
Title (en)
PHOTODIODE STRUCTURE AND METHOD FOR PRODUCING SAME
Title (de)
PHOTODIODENSTRUKTUR UND VERFAHREN ZU IHRER HERSTELLUNG
Title (fr)
PROCÉDÉ DE FABRICATION D'UNE STRUCTURE PHOTODIODE ET STRUCTURE PHOTODIODE
Publication
Application
Priority
- FR 2014308 A 20201231
- EP 2021087850 W 20211230
Abstract (en)
[origin: WO2022144419A1] A substrate (1) having an upper layer (2) made of a cadmium-doped semiconductor material is provided in order to produce a photodiode structure. A first layer (3) made of HgCdTe is formed by liquid phase epitaxy starting from the upper layer (2) with a bath containing an n-type electrically active dopant for electrically doping the first layer (3). The cadmium diffuses from the upper layer (2) to the first layer (3) to form a cadmium concentration gradient that decreases from the interface with the upper layer (2) moving away from the interface. The cadmium concentration gradient causes a band gap gradient which decreases in the first layer (3) from the interface and causes an n-type dopant concentration gradient in the first layer (2) starting from the interface.
IPC 8 full level
H01L 31/103 (2006.01); H01L 31/0296 (2006.01)
CPC (source: EP IL KR US)
H01L 31/02963 (2013.01 - EP IL KR); H01L 31/02966 (2013.01 - EP IL KR US); H01L 31/03529 (2013.01 - US); H01L 31/1032 (2013.01 - EP IL KR); H01L 31/105 (2013.01 - KR); H01L 31/18 (2013.01 - KR); H01L 31/1832 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
FR 3118532 A1 20220701; FR 3118532 B1 20230616; EP 4272264 A1 20231108; IL 304045 A 20230801; JP 2024501694 A 20240115; KR 20230122673 A 20230822; US 2024072183 A1 20240229; WO 2022144419 A1 20220707
DOCDB simple family (application)
FR 2014308 A 20201231; EP 2021087850 W 20211230; EP 21844784 A 20211230; IL 30404523 A 20230626; JP 2023540104 A 20211230; KR 20237025509 A 20211230; US 202118270126 A 20211230