EP 4289001 A1 20231213 - PAD STRUCTURES FOR SEMICONDUCTOR DEVICES
Title (en)
PAD STRUCTURES FOR SEMICONDUCTOR DEVICES
Title (de)
ANSCHLUSSFLÄCHENSTRUKTUREN FÜR HALBLEITERBAUELEMENTE
Title (fr)
STRUCTURES DE PASTILLE POUR DISPOSITIFS À SEMI-CONDUCTEUR
Publication
Application
Priority
CN 2021115512 W 20210831
Abstract (en)
[origin: US2023062321A1] Aspects of the disclosure provide a semiconductor device and a method to fabricate the semiconductor device. The semiconductor device includes a first die comprising a first contact structure formed on a face side of the first die. The semiconductor device includes a first semiconductor structure and a first pad structure that are disposed on a back side of the first die. The first semiconductor structure is conductively connected with the first contact structure from the back side of the first die and the first pad structure is conductively coupled with the first semiconductor structure. An end of the first contact structure protrudes into the first semiconductor structure without connecting to the first pad structure. The first die and a second die can be bonded face-to-face.
IPC 8 full level
H01L 23/498 (2006.01); H01L 23/488 (2006.01)
CPC (source: CN EP KR US)
H01L 21/6835 (2013.01 - EP); H01L 21/8221 (2013.01 - KR); H01L 23/481 (2013.01 - KR US); H01L 23/49811 (2013.01 - CN); H01L 23/49844 (2013.01 - CN); H01L 23/5226 (2013.01 - KR US); H01L 23/5283 (2013.01 - KR US); H01L 24/02 (2013.01 - CN); H01L 24/03 (2013.01 - CN KR US); H01L 24/05 (2013.01 - KR US); H01L 24/08 (2013.01 - KR US); H01L 25/0657 (2013.01 - KR US); H01L 25/18 (2013.01 - EP KR); H01L 25/50 (2013.01 - EP KR); H01L 27/0688 (2013.01 - EP KR); H10B 41/27 (2023.02 - EP KR US); H10B 41/35 (2023.02 - US); H10B 41/40 (2023.02 - US); H10B 43/27 (2023.02 - EP KR); H10B 43/50 (2023.02 - EP); H01L 21/8221 (2013.01 - EP); H01L 25/0657 (2013.01 - EP); H01L 2224/0362 (2013.01 - KR US); H01L 2224/05022 (2013.01 - KR US); H01L 2224/08146 (2013.01 - KR US); H01L 2225/06541 (2013.01 - EP); H01L 2225/06544 (2013.01 - KR US); H01L 2924/1431 (2013.01 - US); H01L 2924/1438 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
US 2023062321 A1 20230302; CN 113906560 A 20220107; EP 4289001 A1 20231213; JP 2024509989 A 20240305; KR 20230143182 A 20231011; WO 2023028801 A1 20230309
DOCDB simple family (application)
US 202117503077 A 20211015; CN 2021115512 W 20210831; CN 202180002984 A 20210831; EP 21955379 A 20210831; JP 2023556565 A 20210831; KR 20237030884 A 20210831