EP 4292132 A1 20231220 - GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS AND PROCESS FOR MAKING THE SAME
Title (en)
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS AND PROCESS FOR MAKING THE SAME
Title (de)
GRUPPE-III-NITRID-TRANSISTOREN MIT HOHER ELEKTRONENMOBILITÄT UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
TRANSISTORS À MOBILITÉ D'ÉLECTRONS ÉLEVÉE AU NITRURE DU GROUPE III ET PROCÉDÉ DE FABRICATION Y RELATIF
Publication
Application
Priority
- US 202117172669 A 20210210
- US 2022013085 W 20220120
Abstract (en)
[origin: WO2022173571A1] An apparatus to address gate lag effect and/or other negative performance includes a substrate; a group III-Nitride buffer layer on the substrate; a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer may include a higher bandgap than a bandgap of the group III-Nitride buffer layer; a source electrically coupled to the group III-Nitride barrier layer; a gate electrically coupled to the group III-Nitride barrier layer; a drain electrically coupled to the group III-Nitride barrier layer; and a p-region being arranged at least in the substrate. In particular, the p-region extends toward a source side of the substrate; and the p-region extends toward a drain side of the substrate.
IPC 8 full level
H01L 29/778 (2006.01); H01L 29/20 (2006.01)
CPC (source: EP KR)
H01L 29/0623 (2013.01 - EP KR); H01L 29/1075 (2013.01 - EP KR); H01L 29/2003 (2013.01 - KR); H01L 29/404 (2013.01 - EP KR); H01L 29/41758 (2013.01 - KR); H01L 29/66462 (2013.01 - EP KR); H01L 29/7786 (2013.01 - EP KR); H01L 29/2003 (2013.01 - EP); H01L 29/41758 (2013.01 - EP); H01L 29/42316 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022173571 A1 20220818; WO 2022173571 A8 20230216; CN 117121211 A 20231124; EP 4292132 A1 20231220; JP 2024507153 A 20240216; KR 20230137469 A 20231004
DOCDB simple family (application)
US 2022013085 W 20220120; CN 202280027490 A 20220120; EP 22753113 A 20220120; JP 2023548631 A 20220120; KR 20237030798 A 20220120