EP 4295408 A1 20231227 - SHIELD CONTACT LAYOUT FOR POWER MOSFETS
Title (en)
SHIELD CONTACT LAYOUT FOR POWER MOSFETS
Title (de)
ABSCHIRMUNGSKONTAKTANORDNUNG FÜR LEISTUNGS-MOSFETS
Title (fr)
AGENCEMENT DE CONTACT DE BLINDAGE POUR MOSFETS DE PUISSANCE
Publication
Application
Priority
- US 202163166242 P 20210326
- US 202217655579 A 20220321
- US 2022071278 W 20220323
Abstract (en)
[origin: WO2022204691A1] A method includes defining a plurality of trenches (101, 101-1, 101-2, 102-3, 10-4, 101-c, 101-L, 101-M, 101-U) of a first type that extend in a longitudinal direction in a semiconductor substrate, and defining a trench (105, 105-1, 105-2, 105-3, 105-4) of a second type extending in a lateral direction and intersecting the plurality of trenches (101, 101-1, 101-2, 102-3, 10-4, 101-c, 101-L, 101-M, 101-U) of the first type. The trench (105, 105-1, 105-2, 105-3, 105-4) of the second type is in fluid communication with each of the intersected plurality of trenches (101, 101-1, 101-2, 102-3, 10-4, 101-c, 101-L, 101-M, 101-U) of the first type. The method further includes disposing a shield poly layer (111) in the plurality of trenches (101, 101-1, 101-2, 102-3, 10-4, 101-c, 101-L, 101-M, 101-U) of the first type and the trench (105, 105-1, 105-2, 105-3, 105-4) of the second type, disposing an inter-poly dielectric layer (112) and a gate poly layer (108) above the shield poly layer (111) in the plurality of trenches (101, 101-1, 101-2, 102-3, 10-4, 101-c, 101-L, 101-M, 101-U) of the first type and the trench (105, 105-1, 105-2, 105-3, 105-4) of the second type, and forming an electrical contact to the shield poly layer (111) through an opening (106, 16) in the inter-poly dielectric layer (112) and the gate poly layer (108) disposed in the trench of the second type.
IPC 8 full level
H01L 29/06 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP KR)
H01L 29/0696 (2013.01 - EP KR); H01L 29/407 (2013.01 - EP KR); H01L 29/66734 (2013.01 - EP KR); H01L 29/7813 (2013.01 - EP KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022204691 A1 20220929; EP 4295408 A1 20231227; JP 2024511470 A 20240313; KR 20230159452 A 20231121; TW 202249294 A 20221216
DOCDB simple family (application)
US 2022071278 W 20220323; EP 22715957 A 20220323; JP 2023558958 A 20220323; KR 20237033363 A 20220323; TW 111111248 A 20220325