EP 4300559 A1 20240103 - A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
Title (en)
A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
Title (de)
VERFAHREN ZUR FORMUNG EINES HALBLEITERBAUELEMENTS
Title (fr)
PROCÉDÉ DE FORMATION D'UN DISPOSITIF À SEMICONDUCTEUR
Publication
Application
Priority
EP 22181159 A 20220627
Abstract (en)
[origin: US2023420544A1] In one aspect, a method of forming a semiconductor device including a plurality of stacked transistor devices having a bottom transistor device and a top transistor device can include: forming a plurality of parallel fin structures on a substrate; forming a sacrificial gate across the fin structures; forming bottom source/drain bodies for each bottom transistor device by epitaxy; forming a bottom dummy contact layer covering the bottom source/drain bodies; forming top source/drain bodies for each top transistor device over the bottom dummy contact layer by epitaxy; depositing an insulating material over the bottom dummy contact layer and the top source/drain bodies; replacing the sacrificial gate with a functional gate stack by a replacement metal gate process; patterning holes extending through the insulating material, with each hole exposing an upper surface portion of the bottom dummy contact layer; replacing the bottom dummy contact layer with one or more contact metals, which can include etching the dummy material via the holes and thereafter depositing the one or more contact metals via the holes; and etching cuts through the contact metal via the holes.
IPC 8 full level
H01L 21/822 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01)
CPC (source: CN EP US)
H01L 21/8221 (2013.01 - EP); H01L 21/823807 (2013.01 - US); H01L 21/823814 (2013.01 - US); H01L 21/823821 (2013.01 - CN US); H01L 21/823871 (2013.01 - CN EP); H01L 27/0688 (2013.01 - EP); H01L 27/092 (2013.01 - EP); H01L 27/0924 (2013.01 - US); H01L 29/0673 (2013.01 - US); H01L 29/0847 (2013.01 - EP); H01L 29/41725 (2013.01 - EP); H01L 29/41733 (2013.01 - US); H01L 29/42392 (2013.01 - EP US); H01L 29/66439 (2013.01 - EP US); H01L 29/66545 (2013.01 - EP US); H01L 29/78696 (2013.01 - EP); B82Y 10/00 (2013.01 - EP); H01L 29/0673 (2013.01 - EP); H01L 29/775 (2013.01 - EP US); H01L 29/78696 (2013.01 - US)
Citation (search report)
- [A] US 2021265348 A1 20210826 - XIE RUILONG [US], et al
- [A] US 2019319095 A1 20191017 - ZHANG JINGYUN [US], et al
- [A] US 2022093593 A1 20220324 - YANG PO-YU [TW]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
EP 4300559 A1 20240103; CN 117316875 A 20231229; US 2023420544 A1 20231228
DOCDB simple family (application)
EP 22181159 A 20220627; CN 202310644065 A 20230601; US 202318341196 A 20230626