EP 4300578 A1 20240103 - INTEGRATED CIRCUIT DEVICES WITH DIODES INTEGRATED IN SUBFINS
Title (en)
INTEGRATED CIRCUIT DEVICES WITH DIODES INTEGRATED IN SUBFINS
Title (de)
INTEGRIERTE SCHALTUNGSANORDNUNGEN MIT IN UNTERLAMELLEN INTEGRIERTEN DIODEN
Title (fr)
DISPOSITIFS DE CIRCUIT INTÉGRÉ À DIODES INTÉGRÉES DANS DES SOUS-AILETTES
Publication
Application
Priority
US 202217850414 A 20220627
Abstract (en)
[origin: US2023420443A1] Integrated circuit (IC) devices with diodes formed in a subfin between a support structure of an IC device and one or more nanoribbon stacks are disclosed. To alleviate challenges of limited semiconductor cross-section provided by the subfin, etch depths in the subfin (i.e., depths of recesses in the subfin formed as a part of forming the diodes) are selectively optimized and varied. Deeper recesses are made in subfin portions at which diode terminals (e.g., anodes and cathodes) are formed, to increase the semiconductor cross-section in those portions, thus providing improved subfin contacts. Shallower recesses (or no recesses) are made in subfin portion between the diode terminals, to increase subfin retention. Thus, subfin diodes may be provided in a manner that enables improved diode conductance and/or improved current carrying capabilities while advantageously using substantially the same etch processes as those used for forming nanoribbon-based transistors elsewhere in the IC device.
IPC 8 full level
H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP US)
H01L 21/02603 (2013.01 - US); H01L 27/0255 (2013.01 - EP US); H01L 27/0629 (2013.01 - EP); H01L 27/0886 (2013.01 - US); H01L 29/0673 (2013.01 - EP US); H01L 29/0847 (2013.01 - EP); H01L 29/66439 (2013.01 - EP); H01L 29/775 (2013.01 - EP); H01L 29/785 (2013.01 - US); H01L 29/861 (2013.01 - EP US); B82Y 10/00 (2013.01 - EP); H01L 29/42392 (2013.01 - EP); H01L 29/78696 (2013.01 - EP)
Citation (search report)
- [IA] US 2022077140 A1 20220310 - THOMSON NICHOLAS A [US], et al
- [A] US 2022199610 A1 20220623 - GUHA BISWAJEET [US], et al
- [A] US 2021391320 A1 20211216 - WANG CHIH-HUNG [TW], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
DOCDB simple family (application)
EP 23171471 A 20230504; US 202217850414 A 20220627