EP 4301904 A1 20240110 - DEVICE AND METHOD FOR THE USER-FRIENDLY AND RELIABLE GALVANIC GROWTH OF A PLURALITY OF NANOWIRES
Title (en)
DEVICE AND METHOD FOR THE USER-FRIENDLY AND RELIABLE GALVANIC GROWTH OF A PLURALITY OF NANOWIRES
Title (de)
VORRICHTUNG UND VERFAHREN ZUM BENUTZERFREUNDLICHEN UND ZUVERLÄSSIGEN GALVANISCHEN WACHSEN EINER VIELZAHL VON NANODRÄHTEN
Title (fr)
DISPOSITIF ET PROCÉDÉ POUR LA CROISSANCE GALVANIQUE CONVIVIALE ET FIABLE D'UNE PLURALITÉ DE NANOFILS
Publication
Application
Priority
- DE 102021105128 A 20210303
- EP 2022054382 W 20220222
Abstract (en)
[origin: WO2022184504A1] The invention relates to a device (1) for galvanically growing a plurality of nanowires (2) on a substrate (3), comprising a substrate holder (4) and a housing (34), in which a chamber (18), a control unit (8) and a storage container (35) for an electrolyte are arranged, wherein the device (1) is configured to allow the plurality of nanowires (2) to grow from the electrolyte on the substrate (3) when the substrate holder (4) with the substrate (3) is introduced in the chamber (18).
IPC 8 full level
C25D 1/00 (2006.01)
CPC (source: EP KR)
C25D 1/00 (2013.01 - EP); C25D 1/006 (2013.01 - EP KR); C25D 1/04 (2013.01 - KR); B82Y 30/00 (2013.01 - KR); B82Y 40/00 (2013.01 - KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
DE 102021105128 A1 20220908; CN 116964251 A 20231027; EP 4301904 A1 20240110; JP 2024508156 A 20240222; KR 20230152109 A 20231102; TW 202248114 A 20221216; WO 2022184504 A1 20220909
DOCDB simple family (application)
DE 102021105128 A 20210303; CN 202280018520 A 20220222; EP 2022054382 W 20220222; EP 22707698 A 20220222; JP 2023553551 A 20220222; KR 20237033066 A 20220222; TW 111105841 A 20220217