Global Patent Index - EP 4301905 A1

EP 4301905 A1 20240110 - GALVANIC GROWTH OF NANOWIRES ON A SUBSTRATE

Title (en)

GALVANIC GROWTH OF NANOWIRES ON A SUBSTRATE

Title (de)

GALVANISCHES WACHSEN VON NANODRÄHTEN AUF EINEM SUBSTRAT

Title (fr)

CROISSANCE GALVANIQUE DE NANOFILS SUR UN SUBSTRAT

Publication

EP 4301905 A1 20240110 (DE)

Application

EP 22708886 A 20220222

Priority

  • DE 102021105126 A 20210303
  • EP 2022054380 W 20220222

Abstract (en)

[origin: WO2022184502A1] The invention relates to a device (1) for galvanically growing a plurality of nanowires (2) on a substrate (3), comprising a substrate holder (4) and a receptacle (5) for the substrate holder (4), wherein the device (1) is configured to allow the plurality of nanowires (2) to grow on the substrate (3) when the substrate holder (4) with the substrate (3) is received in the receptacle (5), the substrate holder (4) having an electronics unit (6) which is configured to influence the growth of the nanowires (2).

IPC 8 full level

C25D 1/00 (2006.01)

CPC (source: EP KR US)

C25D 1/00 (2013.01 - EP); C25D 1/006 (2013.01 - EP KR US); C25D 1/04 (2013.01 - KR US); B82Y 30/00 (2013.01 - KR US); B82Y 40/00 (2013.01 - KR US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

Designated validation state (EPC)

KH MA MD TN

DOCDB simple family (publication)

DE 102021105126 A1 20220908; CN 116964250 A 20231027; EP 4301905 A1 20240110; JP 2024508155 A 20240222; KR 20230152108 A 20231102; TW 202300438 A 20230101; US 2024141531 A1 20240502; WO 2022184502 A1 20220909

DOCDB simple family (application)

DE 102021105126 A 20210303; CN 202280018515 A 20220222; EP 2022054380 W 20220222; EP 22708886 A 20220222; JP 2023553550 A 20220222; KR 20237033065 A 20220222; TW 111105653 A 20220216; US 202218279234 A 20220222