EP 4302339 A1 20240110 - CAPACITOR COMPRISING A STACK OF LAYERS MADE OF A SEMICONDUCTOR MATERIAL HAVING A WIDE BANDGAP
Title (en)
CAPACITOR COMPRISING A STACK OF LAYERS MADE OF A SEMICONDUCTOR MATERIAL HAVING A WIDE BANDGAP
Title (de)
KONDENSATOR MIT EINEM STAPEL VON SCHICHTEN AUS EINEM HALBLEITERMATERIAL MIT BREITER BANDLÜCKE
Title (fr)
CONDENSATEUR COMPRENANT UN EMPILEMENT DE COUCHES EN MATERIAU SEMI-CONDUCTEUR A LARGE BANDE INTERDITE
Publication
Application
Priority
- FR 2102170 A 20210305
- FR 2022050383 W 20220303
Abstract (en)
[origin: WO2022185014A1] The invention relates to a capacitor (10) comprising a stack of layers (1) made of a semiconductor material having a band gap energy greater than 2.3 eV, the stack of layers (1) comprising: an electrically insulating intermediate layer (3) having a resistivity greater than 10 kohm.cm and comprising n- or p-type deep dopants producing energy levels more than 0.4 eV from the conduction band or the valence band of the semiconductor material, two contact layers (2a, 2b) having a resistivity less than or equal to 10 kohm.cm and comprising dopants of a type opposite to that of the deep dopants of the intermediate layer (3), the two contact layers (2a, 2b) being arranged on either side of the intermediate layer (3) to form two junctions pn.
IPC 8 full level
C23C 16/27 (2006.01); H01G 4/008 (2006.01); H01G 4/08 (2006.01); H01L 29/92 (2006.01)
CPC (source: EP KR US)
C23C 16/278 (2013.01 - EP); C30B 25/02 (2013.01 - EP); C30B 29/04 (2013.01 - EP); H01G 4/008 (2013.01 - EP KR); H01G 4/08 (2013.01 - EP KR); H01L 28/40 (2013.01 - EP); H01L 28/60 (2013.01 - EP); H01L 29/92 (2013.01 - EP KR US); H01L 29/1602 (2013.01 - US); H01L 29/1608 (2013.01 - US); H01L 29/2003 (2013.01 - US); H01L 29/24 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022185014 A1 20220909; CN 117121659 A 20231124; EP 4302339 A1 20240110; FR 3120470 A1 20220909; FR 3120470 B1 20231229; JP 2024510144 A 20240306; KR 20230160240 A 20231123; TW 202249319 A 20221216; US 2024154045 A1 20240509
DOCDB simple family (application)
FR 2022050383 W 20220303; CN 202280018667 A 20220303; EP 22712961 A 20220303; FR 2102170 A 20210305; JP 2023553959 A 20220303; KR 20237030118 A 20220303; TW 111108009 A 20220304; US 202218549016 A 20220303