EP 4302370 A1 20240110 - SEMICONDUCTOR OPTOELECTRONIC DEVICE
Title (en)
SEMICONDUCTOR OPTOELECTRONIC DEVICE
Title (de)
OPTOELEKTRONISCHES HALBLEITERELEMENT
Title (fr)
DISPOSITIF OPTO-ÉLECTRONIQUE À SEMI-CONDUCTEURS
Publication
Application
Priority
- FR 2102154 A 20210305
- EP 2022055527 W 20220304
Abstract (en)
[origin: WO2022184886A1] The present invention relates to a semiconductor optoelectronic device (10) comprising a junction (12) formed from a stack of layers defining an n-doped region, an intermediate region and a p-doped region, at least one layer, called the modulated layer, of the n-doped region and/or of the p-doped region and/or of the intermediate region, being formed from a plurality of stacks of sublayers, each sublayer differing from the other sublayers of the same stack in one characteristic of the material of the sublayer, which characteristic is called the distinctive characteristic, the thicknesses and the distinctive characteristics of these sublayers being chosen so as to decrease the absorption of photons in the corresponding region with respect to a semiconductor optoelectronic device, called the reference device, that differs only in that each modulated layer is replaced by a non-modulated layer that is of same thickness as the modulated layer and that has identical characteristics thereto with the exception of the distinctive characteristic.
IPC 8 full level
H01S 5/32 (2006.01); H01L 21/02 (2006.01)
CPC (source: EP KR US)
H01L 21/02395 (2013.01 - KR); H01L 21/02463 (2013.01 - KR); H01L 21/02505 (2013.01 - KR); H01L 21/0251 (2013.01 - KR); H01L 21/02546 (2013.01 - KR); H01L 21/02576 (2013.01 - KR); H01S 5/3216 (2013.01 - EP KR US); H01L 21/02395 (2013.01 - EP); H01L 21/02463 (2013.01 - EP); H01L 21/02505 (2013.01 - EP); H01L 21/0251 (2013.01 - EP); H01L 21/02546 (2013.01 - EP); H01L 21/02576 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022184886 A1 20220909; AU 2022229838 A1 20230921; CA 3210540 A1 20220909; CN 116982228 A 20231031; EP 4302370 A1 20240110; FR 3120473 A1 20220909; FR 3120473 B1 20231222; JP 2024510149 A 20240306; KR 20230161444 A 20231127; US 2024136799 A1 20240425
DOCDB simple family (application)
EP 2022055527 W 20220304; AU 2022229838 A 20220304; CA 3210540 A 20220304; CN 202280019278 A 20220304; EP 22715549 A 20220304; FR 2102154 A 20210305; JP 2023553981 A 20220304; KR 20237032118 A 20220304; US 202218548782 A 20220304