EP 4305660 A1 20240117 - METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE
Title (en)
METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERSTRUKTUR AUF SILICIUMCARBIDBASIS UND VERBUNDZWISCHENSTRUKTUR
Title (fr)
PROCEDE DE FABRICATION D'UNE STRUCTURE SEMI-CONDUCTRICE A BASE DE CARBURE DE SILICIUM ET STRUCTURE COMPOSITE INTERMEDIAIRE
Publication
Application
Priority
- FR 2102307 A 20210309
- FR 2022050380 W 20220303
Abstract (en)
[origin: WO2022189733A1] The invention relates to a method for manufacturing a semiconductor structure, comprising: a) a step of providing a temporary substrate made of a material having a coefficient of thermal expansion close to that of silicon carbide; b) a step of forming an intermediate graphite layer on a front face of the temporary substrate; c) a step of depositing, on the intermediate layer, a polycrystalline silicon carbide support layer having a thickness of between 10 microns and 200 microns, d) a step of transferring a useful monocrystalline silicon carbide layer onto the support layer, directly or via an additional layer, in order to form a composite structure, said transfer using molecular adhesion bonding, e) a step of forming an active layer on the useful layer, f) a step of disassembly at an interface of or inside the intermediate layer, in order to form the semi-conductive structure including the active layer, the useful layer and the support layer, and to form the temporary substrate. The invention likewise relates to a composite structure obtained at an intermediate step of the method.
IPC 8 full level
H01L 21/02 (2006.01)
CPC (source: EP KR US)
H01L 21/02002 (2013.01 - EP KR); H01L 21/02444 (2013.01 - KR US); H01L 21/02447 (2013.01 - KR); H01L 21/02505 (2013.01 - KR); H01L 21/02513 (2013.01 - KR); H01L 21/02529 (2013.01 - KR US); H01L 21/0257 (2013.01 - KR); H01L 21/02598 (2013.01 - KR); H01L 21/02612 (2013.01 - KR); H01L 21/324 (2013.01 - KR); H01L 21/76254 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022189733 A1 20220915; CN 116868312 A 20231010; EP 4305660 A1 20240117; FR 3120737 A1 20220916; JP 2024509679 A 20240305; KR 20230153476 A 20231106; TW 202301555 A 20230101; US 2024145294 A1 20240502
DOCDB simple family (application)
FR 2022050380 W 20220303; CN 202280015305 A 20220303; EP 22712959 A 20220303; FR 2102307 A 20210309; JP 2023545283 A 20220303; KR 20237034300 A 20220303; TW 111107793 A 20220303; US 202218548616 A 20220303