EP 4323562 A1 20240221 - METHOD FOR DEPOSITION OF DENSE CHROMIUM ON A SUBSTRATE
Title (en)
METHOD FOR DEPOSITION OF DENSE CHROMIUM ON A SUBSTRATE
Title (de)
VERFAHREN ZUR ABSCHEIDUNG VON DICHTEM CHROM AUF EINEM SUBSTRAT
Title (fr)
PROCEDE DE DEPOT DE CHROME DENSE SUR UN SUBSTRAT
Publication
Application
Priority
- FR 2105207 A 20210519
- FR 2022050517 W 20220321
Abstract (en)
[origin: WO2022243611A1] The invention relates to a method for depositing a chromium-based material from a target onto a metal substrate, by continuous magnetron sputtering, using a plasma generated in a gas. According to the invention: the ratio between the flow of gaseous ions directed toward the substrate and the flow of neutral chromium atoms directed toward the substrate is adjusted to between 0.5 and 1.7; and a bias voltage of between -50 V and -100 V is applied to the substrates.
IPC 8 full level
C23C 14/00 (2006.01); C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 14/16 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); C23C 14/54 (2006.01); G21C 3/07 (2006.01); G21C 21/02 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01)
CPC (source: EP KR US)
C23C 14/0036 (2013.01 - EP KR US); C23C 14/025 (2013.01 - EP KR US); C23C 14/0641 (2013.01 - EP KR US); C23C 14/165 (2013.01 - EP KR); C23C 14/345 (2013.01 - EP KR US); C23C 14/354 (2013.01 - EP KR); C23C 14/357 (2013.01 - US); C23C 14/505 (2013.01 - US); C23C 14/544 (2013.01 - EP KR); G21C 3/07 (2013.01 - EP KR US); G21C 21/02 (2013.01 - EP KR US); H01J 37/3244 (2013.01 - EP KR US); H01J 37/3405 (2013.01 - EP KR US); H01J 37/3426 (2013.01 - US); H01J 2237/332 (2013.01 - US); Y02E 30/30 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022243611 A1 20221124; BR 112023022042 A2 20231226; CA 3218894 A1 20221124; CN 117280072 A 20231222; EP 4323562 A1 20240221; FR 3123074 A1 20221125; FR 3123074 B1 20230804; JP 2024521256 A 20240530; KR 20240008862 A 20240119; MX 2023013580 A 20231130; US 2024209493 A1 20240627; ZA 202309247 B 20240530
DOCDB simple family (application)
FR 2022050517 W 20220321; BR 112023022042 A 20220321; CA 3218894 A 20220321; CN 202280033605 A 20220321; EP 22715134 A 20220321; FR 2105207 A 20210519; JP 2023571821 A 20220321; KR 20237039542 A 20220321; MX 2023013580 A 20220321; US 202218557430 A 20220321; ZA 202309247 A 20231003