EP 4331017 A1 20240306 - SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH O18 ENRICHED MONOLAYERS AND ASSOCIATED METHODS
Title (en)
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH O18 ENRICHED MONOLAYERS AND ASSOCIATED METHODS
Title (de)
HALBLEITERBAUELEMENT MIT ÜBERGITTER MIT O18-ANGEREICHERTEN MONOSCHICHTEN UND ZUGEHÖRIGE VERFAHREN
Title (fr)
DISPOSITIF À SEMI-CONDUCTEUR COMPRENANT UN SUPER-RÉSEAU QUI COMPREND DES MONOCOUCHES ENRICHIES EN O18 ET PROCÉDÉS ASSOCIÉS
Publication
Application
Priority
- US 202117330831 A 20210526
- US 202117330860 A 20210526
- US 2022030669 W 20220524
Abstract (en)
[origin: WO2022251173A1] A semiconductor device may include a semiconductor layer, and a superlattice adjacent the semiconductor layer and including stacked groups of layers. Each group of layers may include stacked base semiconductor monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one oxygen monolayer of a given group of layers may include an atomic percentage of 18O greater than 10 percent.
IPC 8 full level
H01L 29/15 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP)
H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/152 (2013.01); H01L 29/7833 (2013.01); H01L 29/165 (2013.01); H01L 29/41783 (2013.01); H01L 29/665 (2013.01); H01L 29/66628 (2013.01)
Citation (search report)
See references of WO 2022251173A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022251173 A1 20221201; EP 4331017 A1 20240306; TW 202249276 A 20221216; TW I812186 B 20230811
DOCDB simple family (application)
US 2022030669 W 20220524; EP 22735687 A 20220524; TW 111115599 A 20220425