EP 4334798 A4 20240619 - INTEGRATED CIRCUITS INCLUDING HIGH-VOLTAGE HIGH-POWER AND HIGH-VOLTAGE LOW-POWER SUPPLY NODES
Title (en)
INTEGRATED CIRCUITS INCLUDING HIGH-VOLTAGE HIGH-POWER AND HIGH-VOLTAGE LOW-POWER SUPPLY NODES
Title (de)
INTEGRIERTE SCHALTUNGEN MIT HOCHSPANNUNGS-HOCHLEISTUNGS- UND HOCHSPANNUNGS-NIEDERLEISTUNGSVERSORGUNGSKNOTEN
Title (fr)
CIRCUITS INTÉGRÉS COMPRENANT DES NOEUDS D'ALIMENTATION À HAUTE PUISSANCE HAUTE TENSION ET À BASSE PUISSANCE HAUTE TENSION
Publication
Application
Priority
US 2021040585 W 20210706
Abstract (en)
[origin: WO2023282892A1] An integrated circuit includes a plurality of fluid actuation devices, a plurality of memory cells, a high-voltage high-power supply node, and a high-voltage low-power supply node. The high-voltage high-power supply node is to supply a first voltage and a first maximum current to the plurality of fluid actuation devices. The high-voltage low-power supply node is to supply a second voltage and a second maximum current to the plurality of memory cells.
IPC 8 full level
G06F 1/26 (2006.01); B41J 2/045 (2006.01)
CPC (source: EP US)
B41J 2/04541 (2013.01 - EP); B41J 2/04548 (2013.01 - EP US); B41J 2/0458 (2013.01 - EP); G11C 5/147 (2013.01 - US)
Citation (search report)
- [XI] US 2018236762 A1 20180823 - NEGISHI TOSHIO [JP], et al
- [X] US 2015298457 A1 20151022 - OHMURA MASANOBU [JP]
- See also references of WO 2023282892A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2023282892 A1 20230112; EP 4334798 A1 20240313; EP 4334798 A4 20240619; US 2024286402 A1 20240829
DOCDB simple family (application)
US 2021040585 W 20210706; EP 21949485 A 20210706; US 202118572767 A 20210706