EP 4337814 A1 20240320 - GAS INJECTOR FOR EPITAXY AND CVD CHAMBER
Title (en)
GAS INJECTOR FOR EPITAXY AND CVD CHAMBER
Title (de)
GASINJEKTOR FÜR EPITAXIE- UND CVD-KAMMER
Title (fr)
INJECTEUR DE GAZ POUR CHAMBRE D'ÉPITAXIE ET DE DÉPÔT CHIMIQUE EN PHASE VAPEUR
Publication
Application
Priority
- US 202117317342 A 20210511
- US 202117317363 A 20210511
- US 202117317565 A 20210511
- US 202117317684 A 20210511
- US 2022025321 W 20220419
Abstract (en)
[origin: WO2022240553A1] The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.
IPC 8 full level
C30B 25/14 (2006.01); C30B 25/10 (2006.01); C30B 25/16 (2006.01)
CPC (source: EP KR)
C23C 16/4409 (2013.01 - EP KR); C23C 16/4412 (2013.01 - EP KR); C23C 16/45512 (2013.01 - EP KR); C23C 16/45561 (2013.01 - EP KR); C23C 16/4557 (2013.01 - EP KR); C23C 16/45574 (2013.01 - EP KR); C23C 16/45578 (2013.01 - EP KR); C23C 16/4558 (2013.01 - EP KR); C23C 16/482 (2013.01 - EP KR); C30B 25/14 (2013.01 - EP KR); C30B 25/165 (2013.01 - EP KR); H01L 21/67115 (2013.01 - EP KR); H01L 21/6719 (2013.01 - EP KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022240553 A1 20221117; EP 4337812 A1 20240320; EP 4337813 A1 20240320; EP 4337814 A1 20240320; JP 2024510364 A 20240307; JP 2024510365 A 20240307; JP 2024511917 A 20240318; KR 20230122127 A 20230822; KR 20230122128 A 20230822; KR 20230122130 A 20230822; KR 20230122133 A 20230822; TW 202245110 A 20221116; TW 202245111 A 20221116; TW 202249208 A 20221216; TW 202300692 A 20230101; WO 2022240560 A1 20221117; WO 2022240567 A1 20221117; WO 2022240574 A1 20221117
DOCDB simple family (application)
US 2022025321 W 20220419; EP 22808017 A 20220419; EP 22808022 A 20220420; EP 22808027 A 20220423; JP 2023543348 A 20220419; JP 2023543392 A 20220420; JP 2023543395 A 20220423; KR 20237024873 A 20220423; KR 20237024874 A 20220421; KR 20237024879 A 20220420; KR 20237024902 A 20220419; TW 111116919 A 20220505; TW 111116929 A 20220505; TW 111116944 A 20220505; TW 111116961 A 20220505; US 2022025540 W 20220420; US 2022025772 W 20220421; US 2022026071 W 20220423