EP 4338196 A2 20240320 - III-NITRIDE BASED DEVICES GROWN ON A THIN TEMPLATE ON THERMALLY DECOMPOSED MATERIAL
Title (en)
III-NITRIDE BASED DEVICES GROWN ON A THIN TEMPLATE ON THERMALLY DECOMPOSED MATERIAL
Title (de)
AUF III-NITRID BASIERENDE BAUELEMENTE, DIE AUF EINER DÜNNEN VORLAGE AUF THERMISCH ABGEBAUTEM MATERIAL GEWACHSEN SIND
Title (fr)
DISPOSITIFS À BASE DE NITRURE DU GROUPE III MIS EN CROISSANCE SUR UN GABARIT MINCE SUR UN MATÉRIAU DÉCOMPOSÉ THERMIQUEMENT
Publication
Application
Priority
- US 202163186749 P 20210510
- US 202163230205 P 20210806
- US 2022028264 W 20220509
Abstract (en)
[origin: WO2022240716A2] A III-nitride based device is fabricated having an in-plane lattice constant or strain that is more than 30% biaxially relaxed, by creating a III-nitride based decomposition stop layer on or above a III-nitride based decomposition layer, wherein a temperature is increased to decompose the III-nitride based decomposition layer; and growing a III-nitride based device structure on or above the III-nitride based decomposition stop layer. The III-nitride based device structure includes at least one of an n-type layer, active layer, and p-type layer, and at least one of the n-type layer, active layer and p-type layer has an in-plane lattice constant or strain that is preferably more than 30% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed.
IPC 8 full level
H01L 21/205 (2006.01); C30B 25/10 (2006.01); H01L 21/02 (2006.01); H01L 33/04 (2010.01); H01L 33/12 (2010.01)
CPC (source: EP)
H01L 21/02381 (2013.01); H01L 21/0242 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02507 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02658 (2013.01); H01L 21/7806 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01S 5/0216 (2013.01); H01S 5/0217 (2013.01); H01S 5/34333 (2013.01); H01S 5/04253 (2019.08); H01S 5/2068 (2013.01); H01S 5/22 (2013.01); H01S 5/3063 (2013.01); H01S 5/3213 (2013.01); H01S 2301/173 (2013.01)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2022240716 A2 20221117; WO 2022240716 A3 20230202; WO 2022240716 A9 20221222; EP 4338196 A2 20240320
DOCDB simple family (application)
US 2022028264 W 20220509; EP 22808108 A 20220509