EP 4350018 A1 20240410 - ULTRAFAST HIGH-TEMPERATURE SINTERING APPARATUS
Title (en)
ULTRAFAST HIGH-TEMPERATURE SINTERING APPARATUS
Title (de)
ULTRASCHNELLE HOCHTEMPERATURSINTERVORRICHTUNG
Title (fr)
APPAREIL DE FRITTAGE ULTRARAPIDE À HAUTE TEMPÉRATURE
Publication
Application
Priority
EP 22200017 A 20221006
Abstract (en)
The present invention relates to a sintering apparatus comprising a first and a second carbon-comprising thermally conductive substrate arranged at a distance from each other, thereby providing a space for receiving a substrate to be sintered, and provided between a third and a fourth thermally conductive substrate; and heating means for heating the third and/or the fourth thermally conductive substrate at a heating rate of at least 50 °C/s to a temperature between 750 °C and 1400 °C, thereby heating the first and/or the second thermally conductive substrate, respectively, wherein the third and the fourth thermally conductive substrate comprise, independently from one another, one or more metal nitride and/or metal oxide.
IPC 8 full level
C22B 1/16 (2006.01); C22B 1/20 (2006.01); F27B 17/00 (2006.01); F27D 1/00 (2006.01); F27D 11/00 (2006.01); F27D 11/04 (2006.01); F27D 21/00 (2006.01); F27D 21/02 (2006.01); F27D 99/00 (2010.01)
CPC (source: EP)
C22B 1/16 (2013.01); C22B 1/20 (2013.01); F27B 17/0025 (2013.01); F27D 1/0013 (2013.01); F27D 11/00 (2013.01); F27D 11/04 (2013.01); F27D 21/0014 (2013.01); F27D 21/02 (2013.01); F27D 99/0006 (2013.01); F27D 2099/0008 (2013.01); F27D 2099/0011 (2013.01)
Citation (applicant)
WO 2020236767 A1 20201126 - UNIV MARYLAND [US]
Citation (search report)
- [XI] CN 208567515 U 20190301 - HENAN YALIAN NEW MAT CO LTD
- [XI] US 2007202455 A1 20070830 - SAIJO TAKAMITSU [JP], et al
- [A] US 2020350186 A1 20201105 - LAL ANNENDRA [US], et al
- [A] WO 03095688 A2 20031120 - HARMONICS INC [US]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
DOCDB simple family (application)
EP 22200017 A 20221006; EP 2023077278 W 20231002